SGS Thomson Microelectronics MJD44H11, MJD45H11 Datasheet
COMPLEMENTARY SILICON PNP TRANSISTORS
■ SGS-THOMSON PREFERRED SALESTYPES
■ LOW COLLECTOR-EMITTERSATURATION
VOLTAGE
■ FAST SWITCHING SPEED
APPLICATIONS
■ GENERALPURPOSESWITCHING
■ GENERALPURPOSEAMPLIFIER
MJD44H11
MJD45H11
3
DESCRIPTION
1
The MJD44H11 is a silicon multiepitaxial planar
NPN transistors mounted in DPAK plastic
package.
It is inteded for various switching and general
DPAK
(TO-252)
purpose applications.
The complementaryPNPtype is MJD45H11.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
NPN MJD44 H11
PNP MJD45H11
V
V
I
P
T
For PNP types the values are intented negative.
Collector-Emitter Volta ge ( IB=0) 80 V
CEO
Emitter-Base Voltage ( IC=0) 5 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Cur rent 16 A
CM
Tot al Di s sipation at Tc≤ 25oC20W
tot
Storage T emperature -55 t o 15 0
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
July 1997
1/5
MJD44H11 / MJD45H11
THERMAL DATA
R
thj-case
Ther mal Resistance Junction-cas e Max 6.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
CEO(sus )
∗ Collector-Emitt er
IC=30mA 80 V
Sust aining Voltag e
I
CES
Collector Cut-off
VCB=ratedV
CEOVBE
=0 10 µA
Current
I
V
CE(sat)
EBO
Emit ter Cut -off Current VEB=5V 50 µA
∗ Collector-E mitt er
IC=8A IB=0.4A 1 V
Saturation Voltage
V
BE(sat )
∗ Base-Em itt er
IC=8A IB= 0.8 A 1.5 V
Saturation Voltage
∗ DC Cur rent Gain IC=2A VCE=1V
h
FE
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
∗
For PNP types the values are intented negative.
=4A VCE=1V
I
C
60
40
Safe OperatingArea DeratingCurves
2/5
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