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MJD31B/31C
MJD32B/32C
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronicsPREFERRED
SALESTYPES
■ SURFACE-MOUNTING TO-252 (DPAK)
POWERPACKAGEIN TAPE & REEL
(SUFFIX”T4”)
■ ELECTRICALLY SIMILAR TO TIP31B/CAND
TIP32B/C
APPLICATIONS
■ GENERALPURPOSE SWITCHING AND
AMPLIFIERTRANSISTORS
DESCRIPTION
The MJD31B and MJD31C and the MJD32B and
MJD32C form complementary NPN-PNP pairs.
They are manufactured using Epitaxial Base
technologyfor cost-effectiveperformance.
DPAK
TO-252
(Suffix ”T4”)
3
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN MJD31B MJD31C
PNP MJD32B MJD32C
V
V
V
I
P
T
For PNP types the values are intentednegative.
Collector-Base Voltage (IE=0) 80 100 V
CBO
Collector-Emitter Voltage (IB=0) 80 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Cur rent 3 A
I
C
Collector Pe ak C urrent 5 A
CM
Base Current 1 A
I
B
Tot al D iss ip at i on at Tc=25oC15W
tot
Sto rage Temperature -65 t o 1 50
stg
Max. O perating J unction Temperat u r e 150
T
j
o
C
o
C
May 1999
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MJD31B/31C- MJD32B/32C
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Res ist ance Junction-case Max
Ther mal Res ist ance Junction-ambie nt Max
8.33
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
Collec t or Cut- off
Current (V
BE
=0)
Collec t or Cut- off
Current (I
B
=0)
Emitt er Cut -of f Current
(I
=0)
C
Collec t or -Emit ter
Sust aining Voltage
∗ Collec t or -Emit ter
V
= Ma x Rat i ng 20 µA
CE
V
=60V 50 µA
CE
=5V 0.1 mA
V
EB
IC=30mA
for MJ D31B / 32B
for MJ D31C / 32C
80
100
IC=3A IB= 3 75 m A 1.2 V
Saturation Voltage
∗ Base-Emi tter Voltag e IC=3A VCE=4V 1.8 V
V
BE(on)
h
∗ DC Current Gain IC=1A VCE=4V
FE
h
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
For PNP typevoltage and current values are negative.
Dynamic Curr e nt Gain IC=0.5A VCE=10V f=1KHz
fe
=3A VCE=4V
I
C
=0.5A VCE=10V f=1MHz203
I
C
25
10 50
V
V
Safe Operating Area DeratingCurves
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