SGS Thomson Microelectronics MJD122 Datasheet

MJD122
COMPLEMENTARY SILICON POWER
STMicroelectronics PREFERRED
SALESTYPES
LOW BASE-DRIVEREQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
POWERPACKAGEIN TAPE& REEL (SUFFIX”T4”)
ELECTRICALSIMILARTO TIP122AND
TIP127
APPLICATIONS
GENERALPURPOSESWITCHING AND
AMPLIFIER.
DESCRIPTION
The MJD122 and MJD127 form complementary NPN - PNP pairs.
They are manufactured using Epitaxial Base technologyfor cost-effectiveperformance.
MJD127
DARLINGTON TRANSISTORS
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 10 K R2Typ. =150
ABSOLUTE MAXIMUM RATINGS
Symb ol Para meter Value Uni t
NPN MJD122 PNP MJD127
V V V
I
P T
For PNP types voltage and current values are negative.
January 1999
Collector-Base Voltage (IE=0) 100 V
CBO
Collector-Emitter Voltage (IB=0) 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Current 5 A
I
C
Collector Pea k C urr ent 8 A
CM
Base Current 100 mA
I
B tot Total Dissipation at T
Stor age T em per a t ur e -65 to 150
stg
Max. Operati ng Junct i on Tem perature 150
T
j
case
25 oC
20 W
o
C
o
C
1/6
MJD122 MJD127
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junction-ca s e M ax Ther mal Resist ance Junction-am bient Max
6.25 100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
I
CEO
I
CEX
I
EBO
V
CEO(sus)
Collec t or Cut-off Current (I
E
=0)
Collec t or Cut-off Current (I
B
=0)
Collec t or Cut-off Current
Emitter Cut-off Current (I
C
=0)
Collec t or -Emitter
V
=100V 10 µA
CB
V
=50V 10 µA
CE
VCE=100V VBE=-1.5V V
=100V VBE=-1.5V TC=125oC
CE
V
=5V 2 mA
EB
10
500
IC= 30 mA 100 V
Sust aining Voltage
Collec t or -Emitter
V
CE(sat)
Saturation Voltage
V
Base-Emi tter
BE(sat)
IC=4A IB=16mA
=8A IB=80mA
I
C
IC=8A IB=80mA 4.5 V
2 4
Saturation Voltage
Base-Emi tter Volta ge IC=4A VCE=4V 2.8 V
V
BE(on)
h
DC Curr ent Gain IC=4A VCE=4V
FE
Pulsed: Pulse duration = 300 µs, duty cycle 2%
For PNP typevoltage and currentvalues are negative.
=8A VCE=4V
I
C
1000
100
12000
µA µA
V V
Safe OperatingArea DeratingCurve
2/6
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