SGS Thomson Microelectronics MJD112, MJD117 Datasheet

COMPLEMENTARY SILICON POWER
SGS-THOMSONPREFERREDSALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATEDANTIPARALLEL
COLLECTOR-EMITTER DIODE
SURFACE-MOUNTING TO-252 (DPAK)
ELECTRICALSIMILAR TO TIP112 AND
TIP117
APPLICATIONS
GENERALPURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD112 and MJD117 form complementary PNP - NPN pairs.
They are manufactured using Epitaxial Base technologyfor cost-effective performance.
MJD112 MJD117
DARLINGTONTRANSISTORS
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
R1(typ)= 7K R2(typ)= 200
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V V V
I
P T
ForPNP type voltageand currentvalues are negative.
September1997
Collector-Emitter Voltage (IE= 0) 100 V
CBO
Collector-Emitter Voltage (IB= 0) 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Current 2 A
I
C
Collector Peak Current (tp<5ms) 4 A
CM
Base Current 0.05 A
I
B
Tota l Dissipa tio n at Tc=25oC20W
tot
Storage Temperature -65 to 150
stg
Max. OperatingJu nctionTemperature 150
T
j
o
C
o
C
1/6
MJD112/MJD117
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max
6.25 100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
CEX
I
EBO
V
CEO(sus)
Collector Cut-off Curren t (I
E
=0)
Collector Cut-off Curren t (I
B
=0)
Collector Cut-off Current
Emitter Cut-off Current (I
=0)
C
Collector-Emitter
= 100 V
V
CB
V
=80V
CB
= 50 V 0.02 mA
V
CE
VCB=80V VBE= -1.5V V
=80V VBE= -1.5V Tc= 125oC
CB
=5V 2 mA
V
EB
0.02
0.01mAmA
0.01
0.5
IC= 30 mA 100 V
Sustaining Voltage
V
CE(sat)
V
BE(sat)
Collector-Emitter
Saturation Voltage
Collector-Base
IC=2A IB=8mA I
=4A IB=40mA
C
2 3
IC=4A IB=40mA 4 V
Saturation Voltage
Base-Emit ter V o ltage IC=2A VCE=3V 2.8 V
V
BE(on)
h
DC Current Gain IC=0.5A VCE=3V
FE
Pulsed:Pulseduration = 300 µs, duty cycle 2%
I
=2A VCE=3V
C
I
=4A VCE=3V
C
500
1000
200
12000
mA mA
V V
Safe OperatingAreas Derating Curve
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