SGS Thomson Microelectronics MJ4035, MJ4032 Datasheet
POWER DARLINGTON TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ COMPLEMEN TA RY PNP - NPN DEVI CES
■ MONOLITHI C DARLI NGT O N
CONFIGU R AT ION
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
MJ4032
MJ4035
COMPLE MENTARY SILICON
APPLICATIONS
■ GENERAL PURPOSE SWITCHING
■ GENER AL PURPOSE AMPLIFIERS
DESCRIPTION
The MJ4035 is silicon epitaxial-base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO -3 metal case.
It is inteded for use in general purpose and
amplifier applications.
The complementary PNP type is the MJ4032.
ABSOL UT E MAXIMU M RATINGS
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 6 KΩ R2 Typ. = 55 Ω
Symbol Parameter Value Unit
PNP MJ4032
NPN MJ4035
V
V
V
P
T
For PNP types voltage and current values are negative.
June 1997
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 16 A
I
C
Base Current 0.5 A
I
B
Total Dissipation at Tc ≤ 25 oC 150 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
1/4
MJ4032 / MJ4035
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEO
I
EBO
V
(BR)CEO
Collector Cut-off
Current (R
= 1KΩ)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 100 V
V
CE
V
= 100 V Tc = 150 oC
CE
= 50 V 3 mA
V
CE
= 5 V 5 mA
V
EB
1
5
IC = 100 mA 100 V
Breakdown Voltage
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter Voltage IC = 10 A VCE = 3 V 3 V
BE
h
∗ DC Current Gain IC = 10 A VCE = 3 V 1000
FE
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
IC = 10 A IB = 40 mA
I
= 16 A IB = 80 mA
C
2.5
4
mA
mA
V
V
2/4
Loading...