SGS Thomson Microelectronics MJ2955 Datasheet
2N3055
®
MJ2955
COMPLEMENTARY SILICON POWER TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
■
COMPLEMENT A RY NPN-P NP DEVICES
DESCRIPTION
The 2N3055 is a silicon Epitaxial-Base Planar
NPN transistor mounted in Jedec TO-3 metal
case.
It is intended for power switching circuits, series
and shunt regulators, output stages and high
fidelity amplifiers.
The complementary PNP type is MJ2955.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N3055
PNP MJ2955
V
V
V
V
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (R
CER
Collector-Emitter Voltage (IB = 0) 60 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 15 A
I
C
Base Current 7 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
≤ 100Ω
BE
)
70 V
115 W
o
C
o
C
August 1999
1/4
2N3055 / MJ2955
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.5
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 100 V
V
CE
V
= 100 V Tj = 150 oC
CE
= 30 V 0.7 mA
V
CE
= 7 V 5 mA
V
EB
I
= 200 mA 60 V
C
1
5
Sustaining Voltage
(I
= 0)
B
V
CER(sus)
∗ Collector-Emitter
IC = 200 mA 70 V
Sustaining
Voltage (R
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter Voltage I
BE
h
∗ DC Current Gain I
FE
f
I
s/b
Transition frequency IC = 0.5 A VCE = 10 V 3 MHz
T
∗ Second Breakdown
= 100 Ω)
BE
= 4 A IB = 400 mA
I
C
I
= 10 A IB = 3.3 A
C
= 4 A VCE = 4 A 1.8 V
C
= 4 A VCE = 4 A
C
I
= 10 A VCE = 4 A
C
= 40 V 2.87 A
V
CE
20
5
1
3
70
Collector Current
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
mA
mA
V
V
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