SGS Thomson Microelectronics MJ3001, MJ2501 Datasheet
COMPLEMENTARY SILICON POWER DARLINGTON
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
DESCRIPTION
The MJ2501 is a silicon epitaxial-base PNP
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-3
metal case. They are intented for use in power
linear and switching applications.
The complementary NPN type is the MJ3001.
MJ2501
MJ3001
TRANSIST ORS
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
PNP MJ2501
NPN MJ3001
V
V
V
P
T
For PNP types voltage and current values are negative.
Collector-base Voltage (IE = 0) 80 V
CBO
Collector-emitter Voltage (IB = 0) 80 V
CEO
Emitter-base Voltage (IC = 0) 5 V
EBO
Collector Current 10 A
I
C
Base Current 0.2 A
I
B
Total Dissipation at Tc ≤ 25 oC 150 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
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MJ2501 / MJ3001
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 1 KΩ)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 80 V
V
CE
T
= 150 oC
case
V
= 80 V
CE
= 30 V
V
CE
V
= 40 V
CE
= 5 V
V
EB
I
= 100 mA 80 V
C
1
5
1
1
2mA
Sustaining Voltage
(I
= 0)
B
∗ Collector-emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-emitter Voltage IC = 5 A VCE = 3 V 3 V
BE
h
∗ DC Current Gain IC = 5 A VCE = 3 V 1000
FE
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
IC = 5 A IB = 20 mA
I
= 10 A IB = 50 mA
C
2
4
mA
mA
mA
mA
V
V
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