SGS Thomson Microelectronics MDS80-800, MDS50-1200, MDS50-800, MDS35-1200, MDS35-800 Datasheet
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MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
50-70-85 A
800 and 1200 V
50 and 100 mA
DESCRIPTION
Packaged in ISOTOPmodules, the MDS Series is
based on the half-bridge SCR-diode configuration.
They are suitable for high power applications,
using phase controlled bridges, such as soft-start
circuits, welding equipment, motor speed
controller. The compactness of the ISOTOP
package allows high power density and optimized
power bus connections. Than ks t o their internal
ceramic pad, they provide high voltage i nsulation
(2500V RMS), complying with UL standards (File
ref: E81734).
MDS35/50/80Series
DIODE / SCR MODULE
ISOTOP®
PIN CONNECTIONS
ABSOLUTE RATINGS (limiting values)
Symbol Parameter
I
T(RMS)
I
T(AV)
I
TSM
I
FSM
²
I
dI/dt
I
GM
P
G(AV)
T
stg
T
V
RGM
ISOTOP is a registred trademark of STMicroelectronics
December 2000 - Ed: 4
RMS on-state current 50 70 85 A
Averageon-state current
(Single phase-circuit, 180° conduction angle per device)
Non repetitive surge peak on-state
current (Tj initial = 25°C)
tI
j
²
t Value for fusing
Critical rate of rise of on-state current
I
=2xIGT,tr≤100 ns
G
Peak gate current tp = 20 µs Tj = 125°C 4 A
Averagegate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse SCR gate voltage 5 V
Value
35 50 80
Tc=85°C253555 A
tp = 8.3 ms
tp = 10 ms 400 600 700
tp = 10 ms Tj = 25°C 800 1800 2450
F = 60 Hz Tj = 125°C 50 A/µs
Tj = 25°C
420 630 730
-40to+150
-40to+125
Unit
A
A
°C
2
S
1/7
MDS35 / 5 0 / 80 Series
ELECTRICAL CHARACTERISTICS (T j = 25 °C, unless otherwise specified)
SCR
Symbol Test Conditions
I
GT
VD=12V RL=30Ω
V
GT
V
GD
I
H
I
L
dV/dt
VD=V
DRM
RL=3.3kΩ
IT= 500 mA Gate open
IG=1.2I
V
=67%V
D
GT
DRM
Gate open
Tj = 125°C MIN. 0.2 V
Tj = 125°C MIN. 1000 V/µs
ITM= 80 A tp = 380 µs
V
TM
V
t0
R
d
I
DRM
I
RRM
=110A tp=380µs
I
TM
I
=170A tp=380µs
TM
Tj = 25°C MAX.
Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj= 125°C MAX. 11 7.0 5.5 mΩ
V
DRM/VRRM
RATED
Tj = 25°C MAX. 20 µA
Tj = 125°C 10 mA
MDS
Unit
35 50 80
MIN. 5 10 mA
MAX. 50 100
MAX. 1.3 V
MAX. 80 mA
MAX. 120 mA
1.7 - -
-1.75-
V
--1.75
DIODE
Symbol Test Conditions
V
V
t0
R
I
R
IF=80A
F
= 110 A
I
F
= 170 A
I
F
Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 11 7.0 5.5 mΩ
d
VR=V
RRM
MDS
Unit
35 50 80
V
Tj = 25°C MAX.
1.7 - -
-1.7-
--1.7
Tj = 25°C MAX. 20 µA
Tj = 125°C 10 mA
2/7
MDS35 / 50 / 80 Series
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC) MDS35 1.00 °C/W
MDS50 0.75
MDS80 0.45
PRODUCT SELECTOR
PartNumber
MDS35-xxx X X 50 mA
MDS50-xxx X X 50 mA
MDS80-xxx X X 150 mA
Voltage (xxx)
Sensitivity
800 V 1200 V
ORDERING INFORMATION
SCR
MODULE
SERIES
VOLTAGE:
800: 800V
1200: 1200V
CURRENT:
35: 50A
50: 70A
80: 85A
Package
ISOTOP
TM
OTHER INFORMATION
Part Number Marking Weight Base Quantity Packing mode
MDS35-xxx MDS35-xxx 27.0 g 10 Tube
MSDS50-xxx MDS50-xxx 27.0 g 10 Tube
MDS80-xxx MDS80-xxx 27.0 g 10 Tube
Note:xxx=voltage
3/7
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