SGS Thomson Microelectronics M74HCU04TTR, M74HCU04RM13TR, M74HCU04M1R, M74HCU04B1R Datasheet
M74HCU04
HEX INVERTER (SINGLE STATE)
■ HIGH SPEED:
t
= 5ns (TYP.) at VCC = 6V
PD
■ LOW POWER DISSIPATION:
I
= 1µA(MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
= V
NIH
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 4mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ WIDE OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 6V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
= 10% VCC (MIN.)
NIL
PHL
74 SERIES 04
DESCRIPTION
The M74HCU04 is an high speed CMOS HEX
INVERTER (SINGLE STATE) fabricated with
silicon gate C
2
MOS technology.
As internal circuit is comp osed of a single stage
inverter, it can be used in crystal oscillator.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HCU04B1R
SOP M74HCU04M1R M74HCU04RM13TR
TSSOP M74HCU04TTR
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8April 2002
M74HCU04
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 1 1,
13
2, 4, 6, 8, 10,
12
7 GND Ground (0V)
14
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
or I
I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
1A to 6A Data Inputs
1Y to 6Y Data Outputs
V
CC
Positive Supply Voltage
AY
LH
HL
-0.5 to +7 V
V
V
20 mA
±
20 mA
±
25 mA
±
50 mA
±
500(*) mW
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
2/8
V
V
V
T
t
r
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time VCC = 2.0V
, t
f
V
V
CC
CC
= 4.5V
= 6.0V
2 to 6 V
CC
CC
-55 to 125 °C
0 to 1000 ns
0 to 500 ns
0 to 400 ns
V
V
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
M74HCU04
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.7 1.7 1.7
6.0 4.8 4.8 4.8
2.0 0.3 0.3 0.3
6.0 1.2 1.2 1.2
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
IO=-20 µA
I
=-20 µA
O
I
=-20 µA
O
I
=-4.0 mA
O
I
=-5.2 mA
O
IO=20 µA
I
=20 µA
O
I
=20 µA
O
I
=4.0 mA
O
I
=5.2 mA
O
= VCC or GND
V
I
= VCC or GND
V
I
1.8 2.0 1.8 1.8
4.0 4.5 4.0 4.0
5.5 5.9 5.5 5.5
4.18 4.31 4.13 4.10
5.68 5.8 5.63 5.60
0.0 0.2 0.2 0.2
0.0 0.5 0.5 0.5
0.1 0.5 0.5 0.5
0.17 0.26 0.33 0.40
0.18 0.26 0.33 0.40
-40 to 85°C -55 to 125°C
±
0.1
1
±
±
11020
Unit
1
V4.5 3.6 3.6 3.6
V4.5 0.9 0.9 0.9
V
V
A
µ
A
µ
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input tr = tf = 6ns)
L
Test Condition Value
T
Symbol Parameter
t
TLH tTHL
Output Transition
Time
V
CC
(V)
2.0 30 75 95 110
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns4.5 8151922
6.0 7131619
t
PLH tPHL
Propagation Delay
Time
2.0 18 60 75 90
ns4.5 6121518
6.0 5101315
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circ ui t). Averag e operating current can be obtained by t he following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.0 13 pF
5.0 5101010pF
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC
CC(opr)
Unit
3/8
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