SGS Thomson Microelectronics M74HCU04 Datasheet

HEX INVERTER (SINGLE STAGE)

.HIGH SPEED

tPD= 5 ns (TYP.) AT VCC=5V

.LOWPOWER DISSIPATION

ICC=1 µA (MAX.) AT TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

=10%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

.SYMMETRICALOUTPUT IMPEDANCE

IOH=IOL=4 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATING VOLTAGERANGE

VCC(OPR)= 2 V TO6 V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS04

M54HCU04
M74HCU04

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC U04F1R M74H CU04M1R
M74HC U04B1R M74HCU 04C1 R

F1R

(CeramicPackage)

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HCU04is a highspeed CMOSHEXIN­VERTER (SINGLE STAGE) fabricated in silicon
gate C2MOS technology. It has the same high
speed performance of LSTTL combined with true
CMOS low powerconsumption.

As the intrnal circuit is composed of a single stage
inverter, it can be usedin crystaloscillator.

All inputs are equipped with circuits against static
discharge and transient excess voltage.

INPUT AND OUTPUT EQUIVALENT CIRCUIT

PIN CONNECTIONS (top view)

NC =
No Internal
Connection

January 1993

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M54/M74HCU04

TRUTH TABLE

AY

LH

HL

PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 3, 5, 9,

1A to 6A Data Inputs

11, 13

2, 4, 6, 8,

1Y to 6Y Data Outputs

10, 12

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

LOGI C DI AG RAM

IEC LOGIC SYMBOL

ABSOLU TE MAXI MU M RAT INGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

I

or I

CC

P

D

T

stg

T

L

AbsoluteMaximumRatingsarethosevalues beyond whichdamage tothedevice mayoccur. Functional operationunder theseconditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC

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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

o

C

o

C

M54/M74HCU04

RECO MM ENDED OPERATIN G C ONDI TIONS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICATIONS

Symbol Parameter

V

IH

V

V

OH

V

OL

I

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.7 1.7 1.7

4.5 3.6 3.6 3.6

6.0 4.8 4.8 4.8

Low Level Input

IL

Voltage

2.0 0.3 0.3 0.3

4.5 0.9 0.9 0.9

6.0 1.2 1.2 1.2

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
Quiescent Supply

2.0
V

=

I

4.5 4.0 4.5 4.0 4.0

6.0 5.5 5.9 5.5 5.5

4.5 I

6.0 I

2.0

4.5 0.0 0.5 0.5 0.5

6.0 0.1 0.5 0.5 0.5

4.5 I

6.0 I

6.0

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

1.8 2.0 1.8 1.8

0.0 0.2 0.2 0.2

6.0 VI=VCCor GND 1 10 20 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

V

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