SGS Thomson Microelectronics M74HCT7007 Datasheet
.HIGH SPEED
tpd=11 ns (TYP.) at VCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.COMPATIBLE WITH TTL OUTPUTS
VIH= 2V (MIN.) VIL= 0.8V (MAX)
.OUTPUTDRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICAL OUTPUT IMPEDANCE
|IOH|=IOL=4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.PIN ANDFUNCTION COMPATIBLE
WITH 54/74LS07
DESCRIPTION
The M54/74HCT7007 is a high speed CMOS HEX
BUFFER fabricatedin silicongate C2MOS technology.
It has the same high speed performance of LSTTL
combined with trueCMOSlow powerconsumption.
All inputs are equipped with protection circuits
against static discharge and transient excess voltage. The integrated circuit has totally compatible,
inputand output characteristic, with standard 54/74
LSTTLlogic families.
M54HCT/74HCT devices aredesigned todirectlyinterface HSC2MOS systems with TTL and NMOS
components. Thesedevicesarealsopluginreplacement for LSTTL devicesgivinga reduction ofpower
consumption.
M54 HCT 70 07
M74HCT7007
HEX BUFFER
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC T7007F1R M74H CT7007M 1R
M74HC T7000B 1R M74HCT7 007 C1R
PIN CONNECTIONS(top view)
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
February 1993
NC =
No Internal
Connection
1/9
M54/M74HCT7007
TRUTH TABLE
AY
LL
HH
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9,
1A to 6A Data Inputs
11, 13
2, 4, 6, 8,
1Y to 6Y Data Outputs
10, 12
7 GND Ground (0V)
SCHEM ATIC CIR CUI T (Per Gate)
IEC LOGIC SYMBOL
ABSOLU TE MAXI MU M RAT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
T
stg
T
AbsoluteMaximumRatingsarethose values beyond whichdamage tothedevice mayoccur. Functional operationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derate to300 mW by 10mW/oC: 65oCto85oC
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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
D
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
L
o
C
o
C
M5 4/M7 4HCT7007
RECO MM ENDED OPERAT IN G CO NDI TI O NS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICATIONS
Symbol Parameter
V
V
V
OH
V
OL
I
I
CC
∆I
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time (VCC= 4.5 to 5.5V) 0 to 500 ns
Test Conditions Value
T
High Level Input
IH
Voltage
V
(V)
4.5
=25oC
CC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
2.0 2.0 2.0 V
to
-40 to 85oC
74HC
-55 to 125oC
5.5
Low Level Input
IL
Voltage
4.5
to
0.8 0.8 0.8 V
5.5
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
VI=
IO=-20 µA 4.4 4.5 4.4 4.4
V
IH
4.5
or
I
=-4.0 mA 4.18 4.31 4.13 4.10
O
V
IL
VI=
IO=20µA 0.0 0.1 0.1 0.1
V
IH
4.5
or
I
= 4.0 mA 0.17 0.26 0.33 0.4
O
V
IL
VI=VCCor GND ±0.1 ±1 ±1 µA
5.5
5.5 VI=VCCor GND 1 10 20 µA
Current
Additional worst
CC
case supply
current
5.5 Per Input pin
V
= 0.5V or
I
VI= 2.4V
2.0 2.9 3.0 mA
Other Inputs at
VCCor GND
IO=0
54HC
V
V
o
C
o
C
Unit
V
V
3/9
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