SGS Thomson Microelectronics M74HCT30TTR, M74HCT30RM13TR, M74HCT30M1R, M74HCT30B1R Datasheet
M74HCT30
8-INPUT NAND GATE
■ HIGH SPEED:
t
= 18ns (TYP.) at VCC = 4.5V
PD
■ LOW POWER DISSIPATION:
I
= 1µA(MAX.) at TA=25°C
CC
■ COMPA TIBLE WITH TTL OUTPUTS :
V
= 2V (MIN.) VIL = 0.8V (MAX)
IH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
■ PIN AND FUNCTION COMPATIBLE WITH
PHL
| = IOL = 4mA (MIN)
74 SERIES 30
DESCRIPTION
The M74HCT30 is an high speed CMOS 8-INPUT
NAND GATE fabricated with silicon gate C
2
MOS
technology.
The internal circuit is composed of 5 stages
including buffer output , which enables high noise
immunity and stable output.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HCT30B1R
SOP M74HCT30M1R M74HCT30RM13TR
TSSOP M74HCT30TTR
The M74HCT30 is designed to directly interface
2
HSC
MOS systems with TTL and NMOS
components.All inputs are equipped with
protection circuits against static discharge and
transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8September 2001
M74HCT30
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 2, 3 ,4, 5,
6, 11, 12
9, 10, 13 NC Not connected
8 Y Data Output
7 GND Ground (0V)
14
TRUTH TABLE
ABCDEFGHY
LXXXXXXXH
XLXXXXXXH
XXLXXXXXH
XXXLXXXXH
XXXXLXXXH
XXXXXLXXH
XXXXXXLXH
XXXXXXXLH
HHHHHHHHL
A, B, C, D, E,
F, G, H,
V
CC
Data Inputs
Positive Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/° C from 65°C to 85°C
-0.5 to +7 V
V
V
± 20 mA
± 20 mA
± 25 mA
± 50 mA
500(*) mW
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
t
r
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
, t
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
f
4.5 to 5.5 V
CC
CC
-55 to 125 °C
0 to 500 ns
V
V
2/8
DC SPECIFICATIONS
Symbol Param eter
V
V
V
V
I
∆ I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
Additional Worst
CC
Case Supply
Current
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
4.5
to
2.0 2.0 2.0 V
5.5
4.5
to
0.8 0.8 0.8 V
5.5
4.5
4.5
5.5
5.5
IO=-20 µA
I
=-4.0 mA
O
IO=20 µA
I
=4.0 mA
O
= VCC or GND
V
I
= VCC or GND
V
I
5.5 Per Input pin
V
= 0.5V or
I
V
= 2.4V
I
4.4 4.5 4.4 4.4
4.18 4.31 4.13 4.10
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40
± 0.1 ± 1 ± 1 µA
2.0 2.9 3.0 mA
Other Inputs at
V
or GND
CC
I
= 0
O
M74HCT30
-40 to 85°C -55 to 125°C
11020µA
Unit
V
V
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input tr = tf = 6ns)
L
Test Condition Value
Symbol Parameter
t
TLH tTHL
t
PLH tPHL
Output Transition
Time
Propagation Delay
Time
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
4.5 8151922ns
4.5 18 28 35 42 ns
-40 to 85°C -55 to 125°C
Unit
T
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note
V
CC
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
5101010pF
34 pF
1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circ ui t). Average operating current can be obtained by the following equa tion. I
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + I
CC(opr)
CC
Unit
3/8
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