SGS Thomson Microelectronics M74HCT30 Datasheet
.HIGH SPEED
tPD= 15 ns(TYP.) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.COMPATIBLE WITH TTL OUTPUTS
VIH= 2V(MIN.) VIL= 0.8V (MAX)
.OUTPUT DRIVE CAPABILITY
10 LSTTLLOADS
.SYMMETRICALOUTPUT IMPEDANCE
IOH =IOL= 4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS30
DESCRIPTION
The M54/74HCT30 isahighspeedCMOS8-INPUT
NAND GATE fabricated with silicon gate C2MOS
technology.
It has the same high speedperformance of LSTTL
combined with trueCMOS lowpower consumption.
The internal circuitis composedof 5stages including buffer output, which gives high noiseimmunity
and stable output.All inputs are equipped with protectioncircuitsagainststaticdischarge andtransient
excess voltage.Thisintegrated circuithas input and
outputcharacteristics that arefully compatible with
54/74 LSTTL logic families. M54/74HCT devices
are designed to directly interface HSC2MOS systems with TTL and NMOS components. They are
also plugin replacements forLSTTL devicesgiving
a reduction of power consumption.
M54HCT30
M74HCT30
8 INPUT NANDGATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC T30F1R M74H CT30M1R
M74HC T30B1R M74HCT30C1R
PIN CONNECTIONS (top view)
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
February 1993
NC =
No Internal
Connection
1/9
M54/M74HCT30
TRUTH TABLE
ABCDEFGHY
LXXXXXXXH
XLXXXXXXH
XXLXXXXXH
XXXLXXXXH
XXXXLXXXH
XXXXXLXXH
XXXXXXLXH
XXXXXXXLH
HHHHHHHHL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 2, 3, 4,
5, 6, 11, 12
A, B, C, D,
E, F, G, H
Data Inputs
9, 10, 13 NC Not connected
8 Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
SCHEM ATIC CIRCUIT (Per Gate)
IEC LOGIC SYMBOL
ABSOLU TE MAXIMUM R AT ING S
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethose values beyondwhichdamagetothedevice mayoccur. Functionaloperationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derateto 300 mWby 10mW/oC: 65oCto85oC
2/9
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C
M54/M74HCT30
RECO MM ENDED OPERATI N G CO NDITI O NS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICATIO NS
Symbol Parameter
V
V
V
OH
V
OL
I
I
CC
∆I
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time (VCC= 4.5 to 5.5V) 0 to 500 ns
Test Conditions Value
T
High Level Input
IH
Voltage
V
(V)
4.5
=25oC
CC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
2.0 2.0 2.0 V
to
-40 to 85oC
74HC
-55 to 125oC
5.5
Low Level Input
IL
Voltage
4.5
to
0.8 0.8 0.8 V
5.5
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
VI=
IO=-20 µA 4.4 4.5 4.4 4.4
V
IH
4.5
or
I
=-4.0 mA 4.18 4.31 4.13 4.10
O
V
IL
VI=
IO=20µA 0.0 0.1 0.1 0.1
V
IH
4.5
or
I
= 4.0 mA 0.17 0.26 0.33 0.4
O
V
IL
VI=VCCor GND ±0.1 ±1 ±1 µA
5.5
5.5 VI=VCCor GND 1 10 20 µA
Current
Additional worst
CC
case supply
current
5.5 Per Input pin
V
= 0.5V or
I
VI= 2.4V
2.0 2.9 3.0 mA
Other Inputs at
VCCor GND
IO=0
54HC
V
V
o
C
o
C
Unit
V
V
3/9
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