SGS Thomson Microelectronics M74HCT27 Datasheet
.HIGH SPEED
tPD= 9 ns (TYP.)AT VCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.COMPATIBLE WITH TTL OUTPUTS
VIH= 2V(MIN.) VIL= 0.8V (MAX)
.OUTPUT DRIVE CAPABILITY
10 LSTTLLOADS
.SYMMETRICALOUTPUT IMPEDANCE
IOH =IOL= 4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS27
DESCRIPTION
The M54/74HCT27 is ahigh speed CMOS TRIPLE
3-INPUT NOR GATE fabricated in silicon gate
C2MOS technology.
It has the same high speed performance of LSTTL
combined with true CMOSlow power consumption.
The internal circuitis composedof 3stages includingbufferedoutput,whichgiveshighnoiseimmunity
anda stableoutput.Allinputsareequippedwith protectioncircuitsagainststaticdischarge andtransient
excessvoltage.Thisintegratedcircuit hasinputand
outputcharacteristics that are fully compatible with
54/74 LSTTL logic families. M54/74HCT devices
are designed to directly interface HSC2MOS systems with TTL and NMOS components. They are
also plugin replacements for LSTTL devicesgiving
a reduction of power consumption.
M54HCT27
M74HCT27
TRIPLE3-INPUT NOR GATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC T27F1R M74H CT27M1R
M74HC T27B1R M74HCT27C1R
PIN CONNECTIONS (top view)
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
February 1993
NC =
No Internal
Connection
1/9
M54/M74HCT27
TRUTH TABLE
ABCY
LLLH
HXXL
XHXL
XXHL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 9 1A to 3A Data Inputs
2, 4, 10 1B to 3B Data Inputs
13, 5, 11 1C to 3C Data Inputs
12, 6, 8 1Y to 3Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
LOGI C DIAG RAM
IEC Logic Symbol
ABSOLU TE MAXIMU M RATING S
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethosevalues beyond whichdamagetothedevicemayoccur.Functionaloperationunder these conditionisnotimplied.
(*)500 mW:≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC
2/9
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C
M54/M74HCT27
RECO MM ENDED O PERAT IN G C ONDITI ONS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICA TIONS
Symbol Parameter
V
V
V
OH
V
OL
I
I
CC
∆I
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time (VCC= 4.5 to 5.5V) 0 to 500 ns
Test Conditions Value
T
High Level Input
IH
Voltage
V
(V)
4.5
=25oC
CC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
2.0 2.0 2.0 V
to
-40 to 85oC
74HC
-55 to 125oC
5.5
Low Level Input
IL
Voltage
4.5
to
0.8 0.8 0.8 V
5.5
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
VI=
IO=-20 µA 4.4 4.5 4.4 4.4
V
IH
4.5
or
I
=-4.0 mA 4.18 4.31 4.13 4.10
O
V
IL
VI=
IO=20µA 0.0 0.1 0.1 0.1
V
IH
4.5
or
I
= 4.0 mA 0.17 0.26 0.33 0.4
O
V
IL
VI=VCCor GND ±0.1 ±1 ±1 µA
5.5
5.5 VI=VCCor GND 1 10 20 µA
Current
Additional worst
CC
case supply
current
5.5 Per Input pin
V
= 0.5V or
I
VI= 2.4V
2.0 2.9 3.0 mA
Other Inputs at
VCCor GND
IO=0
54HC
V
V
o
C
o
C
Unit
V
V
3/9
Loading...