.HIGH SPEED
tPD= 12 ns(TYP.) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=4µA(MAX.) AT 25 °C
.OUTPUT DRIVE CAPABILITY
15 LSTTLLOADS
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.SYMMETRICALOUTPUT IMPEDANCE
IOL=IOH = 6 mA (MIN.)
.COMPATIBLE WITHTTL OUTPUTS
VIH= 2V(MIN.) VIL= 0.8V(MAX)
.PIN AND FUNCTION COMPATIBLE
WITH 54/74LS125/126
DESCRIPTION
The M54/74HCT125/126 are high speed CMOS
QUAD BUS BUFFER (3-STATE) FABRICATED IN
SILICONGATEC2MOStechnology. They havethe
same high speed performance ofLSTTLcombined
withtrue CMOS lowpowerconsumption. Thesedevicesrequire the same 3-STATE control input G to
be takenhigh to makethe output gointothehigh impedancestate.This integrated circuit has input and
outputcharacteristics that are fully compatible with
54/74 LSTTL logic families. M54/74HCT devices
are designed to directly interface HSC2MOS systems with TTL and NMOS components. They are
also plugin replacements forLSTTL devices giving
a reduction of power consumption. All inputs are
equipped with protection circuits against static discharge and transientexcessvoltage.
M54/74HCT125
M54/74HCT126
QUAD BUS BUFFERS (3-STATE)
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC TXXXF1 R M74H CTXXXM1 R
M74HC TXXXB1R M74HCT XXXC1R
PIN CONNECTIONS (topview)
HCT125
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
October 1993
HCT126
NC =
No Internal
Connection
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M54/M74HCT125/126
CHIP CARRIER
HCT125 HCT126
TRUTH TABLE (HCT125 )
AGY
XHZ
LLL
HLH
PIN DESCRIPTION (HCT125)
PIN No SYMBOL NAME AND FUNCTION
1, 4, 10, 13 G1 to G4 Output Enable Input
2, 5, 9, 12 A1 to A4 Data Inputs
3, 6, 8, 11 Y1 to Y4 Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
IEC LOGIC SYMBOLS
HCT125 HCT126
TRUTH TABLE (HCT12 6)
AGY
XLZ
LHL
HHH
PIN DESCRIPTION (HC T126)
PIN No SYMBOL NAME AND FUNCTION
1, 4, 10, 13 G1 to G4 Output Enable Input
2, 5, 9, 12 A1 to A4 Data Inputs
3, 6, 8, 11 Y1 to Y4 Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
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CIR CUI T DI A GR AM
HCT125 HCT126
ABSOLU TE M AXIMU M R AT INGS
M54/M74HCT125/126
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
L
AbsoluteMaximum Ratingsarethosevalues beyond whichdamage tothedevicemayoccur.Functionaloperation under theseconditionsis notimplied.
(*)500 mW: ≅ 65oC derate to300mW by 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 35 mA
DC VCCor Ground Current ± 70 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C
RECO MM ENDED OPERAT I N G C ONDITI ONS
Symbol Parameter Value Unit
V
T
t
V
V
r,tf
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time (VCC= 4.5 to 5.5V) 0 to 500 ns
V
V
o
C
o
C
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