SGS Thomson Microelectronics M74HCT10TTR, M74HCT10RM13TR, M74HCT10M1R, M74HCT10B1R Datasheet
M74HCT10
TRIPLE 3-INPUT NAND GATE
■ HIGH SPEED:
t
= 14ns (TYP. ) at VCC = 4.5V
PD
■ LOW POWER DISSIPATION:
I
= 1µA(MAX.) at TA=25°C
CC
■ COMPATIBL E WITH TTL OUTP U TS :
V
= 2V (MIN.) VIL = 0.8V (MAX)
IH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PHL
PLH
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 4mA (MIN)
OH
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 10
DESCRIPTION
The M74HCT10 is an high speed CMOS TRIPLE
3-INPUT NAND GATE fabricated with silicon gate
2
C
MOS technology.
The internal circuit is composed of 3 stages
including buffer output , which enables high noise
immunity and stable output.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HCT10B1R
SOP M74HCT10M1R M74HCT10RM13TR
TSSOP M74HCT10TTR
The M74HCT10 is designed to directly interface
2
HSC
MOS systems with TTL and NMOS
components.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8August 2001
M74HCT10
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 9 1A to 3A Data Inputs
2, 4, 10 1B to 3B Data Inputs
13, 5, 11 1C to 3C Data Inputs
12, 6, 8 1Y to 3Y Data Outputs
7 GND Ground (0V)
14
V
CC
TRUTH TABLE
ABCY
LXXH
XLXH
XXLH
HHHL
X : Don‘t Care
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
; derate to 30 0m W by 10mW/°C from 65
°C
°C to 85°C
Positive Supply Voltage
-0.5 to +7 V
V
V
± 20 mA
± 20 mA
± 25 mA
± 50 mA
500(*) mW
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
2/8
V
V
V
T
t
r
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
, t
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
f
4.5 to 5.5 V
CC
CC
-55 to 125 °C
0 to 500 ns
V
V
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
∆ I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
Additional Worst
CC
Case Supply
Current
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
4.5
to
2.0 2.0 2.0 V
5.5
4.5
to
0.8 0.8 0.8 V
5.5
4.5
4.5
5.5
5.5
IO=-20 µA
I
=-4.0 mA
O
IO=20 µA
I
=4.0 mA
O
= VCC or GND
V
I
= VCC or GND
V
I
5.5 Per Input pin
V
= 0.5V or
I
V
= 2.4V
I
4.4 4.5 4.4 4.4
4.18 4.31 4.13 4.10
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40
± 0.1 ± 1 ± 1 µA
2.0 2.9 3.0 mA
Other Inputs at
V
or GND
CC
I
= 0
O
M74HCT10
-40 to 85°C -55 to 125°C
11020µA
Unit
V
V
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input tr = tf = 6ns)
L
Test Condition Value
Symbol Parameter
t
TLH tTHL
t
PLH tPHL
Output Transition
Time
Propagation Delay
Time
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
4.5 8151922ns
4.5 14 22 28 33 ns
-40 to 85°C -55 to 125°C
Unit
T
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note
V
CC
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
5101010pF
46 pF
1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/3 (per gate)
CC(opr)
Unit
3/8
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