SGS Thomson Microelectronics M74HCT10 Datasheet
.HIGH SPEED
tPD= 11 ns(TYP.) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.COMPATIBLE WITH TTL OUTPUTS
VIH= 2V(MIN.) VIL= 0.8V (MAX)
.OUTPUT DRIVE CAPABILITY
10 LSTTLLOADS
.SYMMETRICALOUTPUT IMPEDANCE
IOH =IOL= 4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS10
DESCRIPTION
The M54/74HCT10 is ahigh speedCMOS TRIPLE
3-INPUT NAND GATE fabricated with silicon gate
C2MOStechnology.It hasthesamehighspeedperformance of LSTTL combined with trueCMOS low
power consumption. The internal circuit is composedof 3 stagesincluding bufferoutput,whichenables high noise immunity and stable output. All
inputs are equipped with protection circuits against
staticdischarge and transient excess voltage.
This integrated circuit has input and outputcharacteristicsthat arefully compatible with 54/74 LSTTL
logic families. M54/74HCT devices are designed to
directly interface HSC2MOSsystems with TTL and
NMOS components. They are also plugin replacements for LSTTL devices giving a reduction of
powerconsumption.
M54HCT10
M74HCT10
TRIPLE 3-INPUT NAND GATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC T10F1R M74H CT10M1R
M74HC T10B1R M74HCT10C1R
PIN CONNECTIONS (top view)
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
February 1993
NC =
No Internal
Connection
1/9
M54/M74HCT10
TRUTH TABLE
ABCY
LXXH
XLXH
XXLH
HHHL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 9 1A to 3A Data Inputs
2, 4, 10 1B to 3B Data Inputs
13, 5, 11 1C to 3C Data Inputs
12, 6, 8 1Y to 3Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
SCHEM ATIC CIR CUI T (Per Gate)
IEC LOGICSYMBOL
ABSOLU TE M AXI MU M R AT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamage tothedevicemayoccur.Functionaloperationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derateto 300 mWby 10mW/oC: 65oCto85oC
2/9
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC OutputDiode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C
M54/M74HCT10
RECO MM ENDED OPERAT IN G CO NDITI O NS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICATIO NS
Symbol Parameter
V
V
V
OH
V
OL
I
I
CC
∆I
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time (VCC= 4.5 to 5.5V) 0 to 500 ns
Test Conditions Value
T
High Level Input
IH
Voltage
V
(V)
4.5
=25oC
CC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
2.0 2.0 2.0 V
to
-40 to 85oC
74HC
-55 to 125oC
5.5
Low Level Input
IL
Voltage
4.5
to
0.8 0.8 0.8 V
5.5
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
VI=
IO=-20 µA 4.4 4.5 4.4 4.4
V
IH
4.5
or
I
=-4.0 mA 4.18 4.31 4.13 4.10
O
V
IL
VI=
IO=20µA 0.0 0.1 0.1 0.1
V
IH
4.5
or
I
= 4.0 mA 0.17 0.26 0.33 0.4
O
V
IL
VI=VCCor GND ±0.1 ±1 ±1 µA
5.5
5.5 VI=VCCor GND 1 10 20 µA
Current
Additional worst
CC
case supply
current
5.5 Per Input pin
V
= 0.5V or
I
VI= 2.4V
2.0 2.9 3.0 mA
Other Inputs at
VCCor GND
IO=0
54HC
V
V
o
C
o
C
Unit
V
V
3/9
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