SGS Thomson Microelectronics M74HCT08 Datasheet
.HIGH SPEED
tPD= 12 ns(TYP.) ATVCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.COMPATIBLE WITH TTL OUTPUTS
VIH= 2V(MIN.) VIL= 0.8V (MAX)
.OUTPUT DRIVE CAPABILITY
10 LSTTLLOADS
.SYMMETRICALOUTPUT IMPEDANCE
IOH =IOL= 4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.PIN ANDFUNCTION COMPATIBLE
WITH 54/74LS08
DESCRIPTION
The M54/74HCT08 is a high speed CMOS QUAD
2-INPUT AND GATE fabricated in silicon gate
C2MOStechnology.It hasthesamehighspeedperformance of LSTTL combined with true CMOS low
power consumption. The internal circuit is composed of 2 stages including buffer output, which
giveshigh noise immunity andstable output. All inputs are equipped with protection circuits against
staticdischarge and transient excess voltage.
This integrated circuit has input and output characteristicsthat are fully compatible with 54/74LSTTL
logic families. M54/74HC devices are designed to
directly interface HSC2MOSsystems with TTL and
NMOS components. They are also plugin replacements for LSTTL devices giving a reduction of
powerconsumption.
M54HCT08
M74HCT08
QUAD 2-INPUT AND GATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC T08F1R M74H CT08M1R
M74HC T08B1R M74HCT08C1R
PIN CONNECTIONS (top view)
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
February 1993
NC =
No Internal
Connection
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M54/M74HCT08
TRUTH TABLE
ABY
LLL
LHL
HLL
HHH
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
SCHEM ATIC C I R CUI T (Per Gate)
IEC LOGIC SYMBOL
ABSOLU TE MAXIMU M RAT ING
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur.Functionaloperationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derateto 300 mWby 10mW/oC: 65oCto85oC
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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C
M54/M74HCT08
RECO MM ENDED OPERATIN G C ONDI TI O NS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICA TIONS
Symbol Parameter
V
V
V
OH
V
OL
I
I
CC
∆I
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time (VCC= 4.5 to 5.5V) 0 to 500 ns
Test Conditions Value
T
High Level Input
IH
Voltage
V
(V)
4.5
=25oC
CC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
2.0 2.0 2.0 V
to
-40 to 85oC
74HC
-55 to 125oC
5.5
Low Level Input
IL
Voltage
4.5
to
0.8 0.8 0.8 V
5.5
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
VI=
IO=-20 µA 4.4 4.5 4.4 4.4
V
IH
4.5
or
I
=-4.0 mA 4.18 4.31 4.13 4.10
O
V
IL
VI=
IO=20µA 0.0 0.1 0.1 0.1
V
IH
4.5
or
I
= 4.0 mA 0.17 0.26 0.33 0.4
O
V
IL
VI=VCCor GND ±0.1 ±1 ±1 µA
5.5
5.5 VI=VCCor GND 1 10 20 µA
Current
Additional worst
CC
case supply
current
5.5 Per Input pin
V
= 0.5V or
I
VI= 2.4V
2.0 2.9 3.0 mA
Other Inputs at
VCCor GND
IO=0
54HC
V
V
o
C
o
C
Unit
V
V
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