SGS Thomson Microelectronics M74HC86TTR, M74HC86RM13TR, M74HC86M1R, M74HC86B1R Datasheet

M74HC86

QUAD EXCLUSIVE OR GATE

■ HIGH SPEED:

t

= 12ns (TYP.) at VCC = 6V

PD

■ LOW POWER DISSIPATION:

I

= 1µA(MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 4mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ WIDE OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 6V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

= 28 % VCC (MIN.)

NIL

PHL

74 SERIES 86

DESCRIPTION

The M74HC86 is an high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate C

2

MOS technology. Input and output buffer are installed, which enables high noise immunity and stable output.

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HC86B1R

SOP M74HC86M1R M74HC86RM13TR

TSSOP M74HC86TTR

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8July 2001

M74HC86

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14

V

CC

TRUTH TABLE

ABY

LLL

LHH HLH HHL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

OK

I

or I

CC

P

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

°C; derate to 300mW by 10mW/°C from 65°C to 85°C

Positive Supply Voltage

-0.5 to +7 V V V

± 20 mA ± 20 mA ± 25 mA ± 50 mA

500(*) mW

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

2/8

V

T

t

r

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time VCC = 2.0V

, t

f

V V

CC CC

= 4.5V = 6.0V

2 to 6 V

CC CC

-55 to 125 °C 0 to 1000 ns

0 to 500 ns 0 to 400 ns

V V

DC SPECIFICATIONS

Symbol Parameter

V

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current Quiescent Supply

CC

Current

M74HC86

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

2.0 1.5 1.5 1.5

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

6.0 1.8 1.8 1.8

2.0

4.5

6.0

4.5

6.0

2.0

4.5

6.0

4.5

6.0

IO=-20 µA I

=-20 µA

O

I

=-20 µA

O

I

=-4.0 mA

O

I

=-5.2 mA

O

IO=20 µA I

=20 µA

O

I

=20 µA

O

I

=4.0 mA

O

I

=5.2 mA

O

= VCC or GND

V

I

= VCC or GND

V

I

1.9 2.0 1.9 1.9

4.4 4.5 4.4 4.4

5.9 6.0 5.9 5.9

4.18 4.31 4.13 4.10

5.68 5.8 5.63 5.60

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40

0.18 0.26 0.33 0.40

-40 to 85°C -55 to 125°C

± 0.1 ± 1 ± 1 µA

11020µA

Unit

V4.5 3.15 3.15 3.15

V4.5 1.35 1.35 1.35

V

AC ELECTRICAL CHARACTERISTICS (C

= 50 pF, Input tr = tf = 6ns)

L

Test Condition Value

T

Symbol Parameter

t

TLH tTHL

Output Transition Time

V

CC

(V)

2.0 30 75 95 110

= 25°C

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns4.5 8151922

6.0 7131619

t

PLH tPHL

Propagation Delay Time

2.0 56 110 140 165 ns4.5 14 22 28 33

6.0 12 19 24 28

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

V

CC

(V)

C

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

Input Capacitance

IN

Power Dissipation

PD

Capacitance (note 1)5.0 26 pF

5.0 5101010pF

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/4 (per gate)

CC(opr)

Unit

3/8