SGS Thomson Microelectronics M74HC85 Datasheet
4-BIT MAGNITUDE COMPARATOR
.HIGH SPEED
tPD= 22 ns (TYP.) atVCC=5V
.LOWPOWER DISSIPATION
ICC=4µA(MAX.) at TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICAL OUTPUT IMPEDANCE
|IOH|=IOL=4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGERANGE
VCC(OPR)= 2V to 6 V
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS85
M54HC85
M74HC85
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 85F1R M74H C85M1R
M74HC 85B1R M 74HC85C1R
(CeramicPackage)
(Chip Carrier)
F1R
C1R
DESCRIPTION
The M54/74HC85 is a high speed CMOS 4-BIT
MAGNITUDECOMPARATOR fabricated in silicon
gate C2MOS technology. It has the same high
speed performance of LSTTL combined with true
CMOS low power consumption. This comparator
compares two 4-bit words and provides a high voltagelevelon oneoftheA >Bout,A =BoutandA<B
out outputs. Thecomparing bit number is easily expanded by cascading several devices as shown in
the typical application. All inputs are equipped with
protection circuitsagainst staticdischarge and transient excess voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
December1992
1/11
M54/M74HC85
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
2IN
3IN
4IN
5 OUT
6 OUT
7 OUT
9, 11, 14, 1 B
10, 12, 13, 15 A
0
0
A<B
A=B
A>B
to B
to A
A<B Expansion Input
A=B Expansion Input
A>B Expansion Input
A>B Expansion Output
A>B
A=B Expansion Output
A=B
A<B Expansion Output
A<B
Word B Inputs
3
Word A Inputs
3
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
LOCIG DIAG RAM
IEC LOGIC SYMBOL
2/11
TRUTH TABLE
M54/M74HC85
COMPARING INPUTS
CASCADING INPUTS OUTPUTS
A>B A<B A=B A>B A<B A=B
A3>B3 X X X X X X H L L
A3=B3 A2>B2 X X X X X H L L
A3=B3 A2=B2 A1>B1 X X X X H L L
A3=B3 A2=B2 A1=B1 A0>B0 X X X H L L
LLLHHL
XXHLLH
A3=B3 A2=B2 A1=B1 A0=B0
LHLLHL
HLLHLL
HHLLLL
A3=B3 A2=B2 A1=B1 A0<B0 X X X L H L
A3=B3 A2=B2 A1<B1 X X X X L H L
A3=B3 A2<B2 X X X X X L H L
A3<B3 X X X X X X L H L
X: DON’TCARE
ABSOLU TE M AXIMU M R AT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethose values beyondwhichdamagetothedevice mayoccur.Functionaloperationundertheseconditionisnotimplied.
(*)500 mW:≅ 65oC derate to300 mW by 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C
3/11
M54/M74HC85
RECO MM ENDED OPERAT I N G CO NDI TI O NS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICATIONS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
2.0
V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 4 40 80 µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
4/11
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