SGS Thomson Microelectronics M74HC76B1R, M74HC76TTR, M74HC76RM13TR, M74HC76M1R Datasheet

M74HC76

DUAL J-K FLIP FLOP WITH PRESET AND CLEAR

■ HIGH SPEED :

f

= 67MHz (TYP.) at VCC = 6V

MAX

■ LOW POWER DISSIPATION:

I

=2µA(MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 4mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ WIDE OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 6V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

= 28 % VCC (MIN.)

NIL

PHL

74 SERIES 76

DESCRIPTION

The M74HC76 is an high speed CMOS DUAL J-K FLIP FLOP WITH CLEAR fabrica ted with silicon gate C

2

MOS technology. Depending on with the logic level at J and K inputs, this device changes state on the negative going transition of clock pulse (CK

). CLEAR ( CL R)

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HC76B1R

SOP M74HC76M1R M74HC76RM13TR

TSSOP M74HC76TTR

and PRESET (PR

) are independent of the clock and are accomplished by a logic low on the corresponding input. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/11August 2001

M74HC76

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 6 1CK 2, 7 1PR 3, 8 1CLR

4, 9 1J, 2J

10, 14 1Q 11, 15 1Q, 2Q True Flip-Flop Outputs 16, 12 1K, 2K

13 GND Ground (0V)

5 Vcc Positive Supply Voltage

TRUTH TABLE

, 2CK , 2PR Set Inputs (Active LOW) , 2CLR

, 2Q

Clock Input(HIGH to LOW edge triggered)

Asynchronous Reset Inputs (Active LOW)

Data Inputs: Flip-Flop 1 and 2

Complement Flip-Flop Outputs

Data Inputs: Flip-Flop 1 and 2

INPUTS OUTPUTS

CLR

L H X X X L H CLEAR

H L X X X H L PRESET

LLXXXHH ----

H H L L Qn Q HHLH LH ---HHHL HL ---HHHH Q H H X X Qn Q

X : Don’t Care

PR JKCKQQ

n NO CHANGE

n Qn TOGGLE

n NO CHANGE

FUNCTION

LOGIC DIAGRAM

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M74HC76

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

OK

I

or I

CC

P

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

T

t

r

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

°C; derate to 300mW by 10mW/°C from 65°C to 85°C

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time VCC = 2.0V

, t

f

V V

CC CC

= 4.5V = 6.0V

-0.5 to +7 V

± 20 mA ± 20 mA ± 25 mA ± 50 mA

500(*) mW

-65 to +150 °C

300 °C

2 to 6 V

CC CC

-55 to 125 °C 0 to 1000 ns

0 to 500 ns 0 to 400 ns

V V

3/11

M74HC76

DC SPECIFICATIONS

Symbol Parameter

V

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current Quiescent Supply

CC

Current

Test Condition Value

V

(V)

CC

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

T

2.0 1.5 1.5 1.5

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

6.0 1.8 1.8 1.8

2.0

4.5

6.0

4.5

6.0

2.0

4.5

6.0

4.5

6.0

IO=-20 µA I

=-20 µA

O

I

=-20 µA

O

I

=-4.0 mA

O

I

=-5.2 mA

O

IO=20 µA I

=20 µA

O

I

=20 µA

O

I

=4.0 mA

O

I

=5.2 mA

O

= VCC or GND

V

I

= VCC or GND

V

I

1.9 2.0 1.9 1.9

4.4 4.5 4.4 4.4

5.9 6.0 5.9 5.9

4.18 4.31 4.13 4.10

5.68 5.8 5.63 5.60

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40

0.18 0.26 0.33 0.40 ± 0.1 ± 1 ± 1 µA

22040µA

Unit

V4.5 3.15 3.15 3.15

V4.5 1.35 1.35 1.35

V

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