SGS Thomson Microelectronics M74HC76 Datasheet

DUAL J-K FLIP FLOP WITHPRESET AND CLEAR

.HIGH SPEED

f

= 65 MHz(TYP.) AT VCC=5V

MAX

.LOWPOWERDISSIPATION

ICC=2µA(MAX.) AT 25 °C

.OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

.SYMMETRICALOUTPUT IMPEDANCE

IOH =IOL= 4 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.HIGH NOISE IMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.WIDE OPERATINGVOLTAGE RANGE

VCC(OPR)= 2V TO6 V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS76

DESCRIPTION

The M54/74HC76is a high speedCMOSDUAL J-K
FLIP FLOP fabricated in silicon gate C2MOStech­nology. Ithas the same high speedperformance of
LSTTL combined with true CMOS low power con­sumption.Depending on with the logiclevelat theJ
and Kinputsthisdevice changes stateon thenega­tive going transition of the clock pulse. CLEAR and
PRESETare independent of theclock and areac­complished by a logic low on the corresponding
input.Allinputsare equipped withprotectioncircuits
against static discharge and transient excess volt­age.

M54HC76
M74HC76

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 76F1R M74H C76M1R
M74HC 76B1R M74HC7 6C1R

PIN CONNECTIONS(top view)

(CeramicPackage)

(Chip Carrier)

F1R

C1R

INPUT AND OUTPUT EQUIVALENT CIRCUIT

October 1992

NC =
No Internal
Connection

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M54/M74HC76

TRUTH TABLE

INPUTS OUTPUTS

CLR PR J K CK Q Q

L H X X X L H CLEAR

H L X X X H L PRESET

LLXXXHH

HHLL Q

n

Q

n

HHLH LH
HHHL HL
HHHH Q
HHXX Q

X:Don’tCare

PIN DESCRIPTION

IEC LOGIC SYMBOL

n
n

Q

n

Q

n

PIN No SYMBOL NAME AND FUNCTION

1, 6 1CK, 2CK Clock Input (HIGH to

LOW edge triggered)
2, 7 1PR, 2PR Set Inputs (Active LOW)
3, 8 1CLR,

2CLR

Asynchronous Reset

Inputs (Active LOW)
4, 9 1J, 2J Data Inputs: Flip-Flop 1

and 2

10, 14 1Q, 2Q Complement Flip-Flop

Outputs

11, 15 1Q, 2Q True Flip-Flop Outputs
16, 12 1K, 2K Data Inputs: Flip-Flop 1

and 2

5 GND Ground (0V)

13 V

CC

Positive Supply Voltage

FUNCTION

NO CHANGE

TOGGLE

NO CHANGE

LOGI C DI AG RAM (1/2 Package)

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M54/M74HC76

ABSOLU TE MAXI MU M RAT INGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

I

or I

CC

P

D

T

stg

T

AbsoluteMaximumRatingsarethose values beyond whichdamage tothedevicemayoccur. Functional operation under these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC

RECO MM ENDED OPERATI N G CONDITIONS

Symbol Parameter Value Unit

V

CC

V

I

V

O

T

op

t

r,tf

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10sec) 300

L

Supply Voltage 2 to 6 V
Input Voltage 0 to V
Output Voltage 0 to V
Operating Temperature: M54HC Series

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

= 6 V 0 to 400

V

CC

o

C

o

C

V
V

o

C

o

C

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M54/M74HC76

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level

OH

Output Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Quiescent Supply

CC

Current

Test Conditions Value

V

(V)

CC

=25oC

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85oC
74HC

-55 to 125oC
54HC

Unit

T

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

2.0

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

=

V

I

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

6.0 VI=VCCor GND 2 20 40 µA

V

V

V

V

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