SGS Thomson Microelectronics M74HC75 Datasheet

.HIGH SPEED

tPD= 10 ns (TYP.) AT VCC=5V

.LOWPOWER DISSIPATION

ICC=2 µA (MAX.) AT TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

.SYMMETRICAL OUTPUT IMPEDANCE

IOH =IOL= 4 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATINGVOLTAGERANGE

VCC=(OPR) = 2 V TO6 V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS75

DESCRIPTION

The M54/74HC75 is a high speed CMOS 4-BIT D­TYPELATCHfabricated insilicongateC2MOStech­nology. It has the same high speed performance of
LSTTL combined with true CMOS low power con­sumption.Itcontains twogroups of2-bit latchescon­trolledbyanenableinput (G1•2orG3•4). These two
latch groups can be used in different circuits. Each
latch has Q and Q outputs (1Q - 4Q and 1Q - 4Q).
Thedata appliedto thedatainput istransferedto the
QandQ outputs whenthe enable input is takenhigh
and the outputs will follow the data input aslong as
the enableinputis kept high. When the enableinput
is takenlow,theinformation data applied tothe data
input is retained at the outputs. All inputs are
equipped with protection circuits against static dis­charge and transient excess voltage.

M54HC75
M74HC75

4 BIT D TYPE LATCH

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 75F1R M74H C75M1R
M74HC 75B1R M 74HC75C1R

PIN CONNECTIONS(top view)

(CeramicPackage)

(Chip Carrier)

F1R

C1R

INPUT AND OUTPUT EQUIVALENT CIRCUIT

December1992

NC =
No Internal
Connection

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M54/M74HC75

TRUTH TABLE

INPUTS OUTPUTS

DGQQ

LHLH
HHHL
X L Qn Qn LATCH

FUNCTION

PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 14, 11, 8 1Q to 4Q Complementary Latch

Outputs

2, 3, 6, 7 1D to 4D Data Inputs

4G3•4 Latch Enable Input,

latches 3 and 4

13 G1 • 2 Latch Enable Input,

latches 1 and 2

16, 15, 10, 9 1Q to 4Q Latch Outputs

12 GND Ground (0V)

5V

CC

Positive Supply Voltage

SCHEM ATIC C I R CUI T

IEC LOGIC SYMBOL

ABSOLU TE MAXIMU M RAT INGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

I

or I

CC

P

D

T

stg

T

L

AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevicemayoccur.Functional operationunder theseconditionisnotimplied.
(*)500 mW: ≅ 65oC derate to300 mW by 10mW/oC: 65oCto85oC

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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

o

C

o

C

M54/M74HC75

RECO MM ENDED OPERATI N G CONDI TI O NS

Symbol Parameter Value Unit

V

V

V
T

t

r,tf

DC SPECIFICA TIONS

Symbol Parameter

V

IH

V

V

OH

V

OL

I

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

Low Level Input

IL

Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
Quiescent Supply

2.0
V

=

I

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

6.0 VI=VCCor GND 2 20 40 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

V

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