SGS Thomson Microelectronics M74HC688 Datasheet
.HIGH SPEED
tPD= 17 ns(TYP.) AT VCC=5V
.LOWPOWERDISSIPATION
ICC=4µA(MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICALOUTPUT IMPEDANCE
|IOH|=IOL= 4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGE RANGE
VCC(OPR)= 2 V TO6 V
.PIN ANDFUNCTION COMPATIBLE
WITH 54/74LS688
M54HC688
M74HC688
8 BITEQUALITY COMPARATOR
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 688F1R M74H C688M1R
M74HC 688B1R M74HC6 88C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC688 utilizes silicon gate C2MOS
technology to achieve operating speeds equivalent
to LSTTL devices. Along with the low power dissipationand high noiseimmunityof standardC2MOS
integrated circuit,it possesses the drivingcapability
of 10LSTTL load.The M54/74HC688 compares bit
for bit two 8-bit words applied on inputs P0 -P7 and
inputsQ0 -Q7andindicates whether ornot theyare
equal. A single active low enable is provided to facilitatecascadingseveral packages to enable comparison of words greater than 8 bits. All inputs are
equipped with protection circuit against static discharge andtransient excess voltage.
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
October 1992
1/10
M54/M74HC688
INPUT AND OUTPUT EQUIVALENT CIRCUIT
TRUTH TABLE
INPUT OUTPUT
P, Q G P = Q
P=Q L L
P≠QL H
XHH
X:DON’T CARE
LOGIC DIAGRAM
2/10
M54/M74HC688
PIN DESCRIPTION
IEC LOGIC SYMBOL
PIN No SYMBOL NAME AND FUNCTION
1 G Enable Input (Active
LOW)
2, 4, 6, 8,
P0 to P7 Word Inputs
11, 13, 15,
17
3, 5, 7, 9,
Q0 to Q7 Word Outputs
12, 14, 16,
18
19 P = Q Equal to Output
10 GND Ground (0V)
20 V
CC
Positive Supply Voltage
ABSOLU TE MAXIMUM RAT ING S
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethose valuesbeyond whichdamage to thedevice mayoccur.Functional operation under these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
L
o
C
o
C
RECO MM ENDED OPE RAT IN G C O NDI TIONS
Symbol Parameter Value Unit
V
T
t
V
V
r,tf
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
= 6 V 0 to 400
V
CC
V
V
o
C
o
C
3/10
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