SGS Thomson Microelectronics M74HC670 Datasheet

4 WORD X 4 BIT REGISTER FILE (3 STATE)

.HIGH SPEED

tPD= 23 ns(TYP.) AT VCC=5V

.LOWPOWERDISSIPATION

ICC=4µA(MAX.) AT TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

.SYMMETRICALOUTPUT IMPEDANCE

|IOH|=IOL=4 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATINGVOLTAGE RANGE

VCC(OPR)= 2 V TO6 V

.PIN ANDFUNCTION COMPATIBLE

WITH 54/74LS670

M54HC670
M74HC670

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 670F1R M74H C670M1R
M74HC 670B1R M74HC6 70C1R

F1R

(CeramicPackage)

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HC670 isahighspeedCMOS4 WORD
X 4 BIT REGISTER FILE (3-STATE) fabricated in
silicon gate C2MOS technology. It has the same
high speed performance of LSTTL combined with
true CMOS low power consumption. The
M54HC/74HC670 is a4 x 4 Register File organized
as fourwords by four bits. Separate read andwrite
inputs, both address and enable, allow simulta­neousreadand writeoperation. The 3-state outputs
make it possible to connect up to 128outputs to in­creasethewordcapacity upto512 words.Any num­ber of these devices can be operated in parallel to
generate ann-bitlength.Allinputs areequippedwith
protection circuits against staticdischargeand tran­sient excess voltage.

PIN CONNECTIONS(top view)

NC =
No Internal
Connection

October 1992

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M54/M74HC670

WRIT E FUNCTI ON TAB LE

WRITE INPUTS WORDS

WB WA WE 0 1 2 3

L L LQ=DQ0Q0Q0

LHLQ0Q=DQ0Q0
HLLQ0Q0Q=DQ0
H H L Q0Q0Q0Q=D
X X H Q0 Q0 Q0 Q0

Notes: 1 *: DON’TCARE Z: HIGH IMPEDANCE

2 (Q = D) = THEFOUR SELECT INTERNALFLIP FLOP OUTPUTS WILL ASSUMETHE STATESAPPLIEDTO THE FOUR

EXTERNALDATA INPUTS.
3 Q0 =THE LEVELOF Q BEFORETHE INDICATEDINPUTCONDITIONSWERE ESTABLISHED.
4 W0B1 = THEFIRST BIT OF WORD0, ETC.

READ FUNCTION TABLE

READ INPUTS OUTPUTS

RB RA RE Q0 Q1 Q2 Q3

L L L W0B1 W0B2 W0B3 W0B4

L H L W1B1 W1B2 W1B3 W1B4
H L L W2B1 W2B2 W2B3 W2B4
H H L W3B1 W3B2 W3B3 W3B4
XXHZZZZ

LOGI C DIAG RAM

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INPUT AND OUTPUT EQUIVALENT CIRCUIT

M54/M74HC670

PIN DESCRIPTION

IEC LOGIC SYMBOL

PIN No SYMBOL NAME AND FUNCTION

5, 4 RA, RB Read Address Inputs

10, 9, 7, 6 Q1 to Q4 Data Outputs

11 RE 3 State Output Read

Enable Input (Active LOW)

12 WE Write Enable Input (Active

LOW)

14, 13 WA, WB Write Address Inputs

15, 1, 2, 3 D1 to D4 Data Inputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

ABSOLU TE M AXI MU M R AT ING S

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

I

or I

CC

P

D

T

stg

T

AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevicemayoccur.Functional operation under these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

L

o

C

o

C

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M54/M74HC670

RECO MM ENDED OPERAT I N G CO NDITI ONS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICATIO NS

Symbol Parameter

V

IH

V

V

OH

V

OL

I

I

OZ

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

Low Level Input

IL

Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
3 State Output

Off State Current
Quiescent Supply

2.0
V

=

I

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

6.0

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

VI=VIHor V

VO=VCCor GND

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

IL

±0.5 ±5 ±5 µA

6.0 VI=VCCor GND 4 40 80 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

V

4/12