SGS Thomson Microelectronics M74HC645, M74HC640, M74HC245 Datasheet

M54/74HC245/640/643
M54/74HC245/640/643

October1993

HC640 INVERTING, HC643 INVERTING/NON INVERTING

OCTALBUS TRANSCEIVER(3-STATE):HC24 5 NONINVERTING

B1R

(PlasticPackage)

ORDER CODES :

M54HC X XXF1R M74HC XXXM1R
M74HC X XXB1R M74HCXXXC1 R

F1R

(CeramicPackage)

M1R

(MicroPackage)

C1R

(Chip Carrier)

PIN CONNECTION (top view)

.HIGH SPEED

tPD= 10 ns(TYP.) at VCC=5V

.LOWPOWER DISSIPATION

ICC=4µA (MAX.) at TA=25oC

.HIGH NOISE IMMUNITY

V

NIH=VINL

=28%VCC(MIN.)

.OUTPUTDRIVE CAPABILITY

15 LSTTL LOADS

.SYMMETRICALOUTPUT IMPEDANCE

|IOH|=IOL=6 mA (MIN)

.BALANCEDPROPAGATIONDELAYS

t

PLH=tPHL

.WIDE OPERATING VOLTAGERANGE

VCC(OPR)= 2 V TO 6 V

.PIN AND FUNCTION COMPATIBLE

WITH 54/74LS245/640/643

DESCRIPTION

The M54/74HC245, HC640 and HC643 utilise
silicongate C2MOStechnology to achive operating
speedsequivalent to LSTTL devices.

Alongwiththelow power dissipationand highnoise
immunity of standards C2MOS integrated circuit, it
possesses the capability to drive 15 LSTTL loads.
TheseIC’s are intended fortwo-way asynchronous
communication between data buses, and the
direction of data trasmission is determined by DIR
input. The enable input (G) can be used to disable
the devicesothatthe busesare effectivelyisolated.

All input are equipped with protection circuits
againststaticdischarge andtransientdischarge and
transient excess voltage.

IT IS PROHIBITED TO APPLY A SIGNAL TO A
BUS TERMINAL WHEN IT IS IN OUTPUT MODE
AND WHEN A BUS THERMINAL IS FLOATING
(HIGH IMPEDANCE STATE), IT IS REQUESTED
TO FIX THE INPUT LEVEL BY MEANS OF
EXTERNAL PULL DOWN OR PULL UP
RESISTOR.

HC245 HC640 HC643

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INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1 DIR Directional Control

2, 3, 4, 5,

6, 7, 8, 9

A1 to A8 Data Inputs/Outputs

18, 17, 16,
15, 14, 13,

12, 11

B1 to B8 Data Inputs/Outputs

19 G Output Enabel Input

(Active LOW)
10 GND Ground (0V)
20 V

CC

Positive Supply Voltage

IEC LOGIC SYMBOLS

TRUTH TABLE

INPUT FUNCTION OUTPUT

G DIR A BUS B BUS HC245 HC640 HC643

L L OUTPUT INPUT A = B A = B A = B
L H INPUT OUTPUT B = A B = A B = A

HXZZZZZ

X: ”H” or ”L”
Z: Highimpedance

HC245 HC640 HC643

M54/M74HC245/640/643

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LOGIC DIAGRAM (HC640)

ABSOLU TE MAXIMUM RATING

Symbol Parameter Value Unit

V

CC

Supply Voltage -0.5 to +7 V

V

I

DC Input Voltage -0.5 to VCC+ 0.5 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5 V

I

IK

DC Input Diode Current ± 20 mA

I

OK

DC Output Diode Current ± 20 mA

I

O

DC Output Source Sink Current Per Output Pin ± 35 mA

I

CC

or I

GND

DC VCCor Ground Current ± 70 mA

P

D

Power Dissipation 500 (*) mW

T

stg

Storage Temperature -65 to +150

o

C

T

L

Lead Temperature (10 sec) 300

o

C

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur.Functional operationunder thesecondition isnotimplied.
(*)500 mW:≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC

NOTE:INCASE OF HC245 OR HC643, INPUTINVERTERS MARKED*AT ABUSAND B BUSARE ELIMINATEDRESPECTIVELY

M54/M74HC245/640/643

3/11

RECO MM ENDED OPERAT I N G CONDI TI O NS

Symbol Parameter Value Unit

V

CC

Supply Voltage 2 to 6 V

V

I

Input Voltage 0 to V

CC

V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature: M54HC Series

M74HC Series

-55 to +125

-40 to +85

o

C

o

C

t

r,tf

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

CC

= 4.5 V 0 to 500

V

CC

= 6 V 0 to 400

DC SPECIFICATIO NS

Symbol Parameter

Test Conditions Value

Unit

V

CC

(V)

T

A

=25oC

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC
54HC

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

2.0 1.5 1.5 1.5
V

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

V

IL

Low Level Input
Voltage

2.0 0.5 0.5 0.5
V

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

V

OH

High Level
Output Voltage

2.0

V

I

=

V

IH

or

V

IL

IO=-20 µA

1.9 2.0 1.9 1.9

V

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

O

=-6.0 mA 4.18 4.31 4.13 4.10

6.0 I

O

=-7.8 mA 5.68 5.8 5.63 5.60

V

OL

Low Level Output
Voltage

2.0

V

I

=

V

IH

or

V

IL

IO=20µA

0.0 0.1 0.1 0.1

V

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

O

= 6.0 mA 0.17 0.26 0.33 0.40

6.0 I

O

= 7.8 mA 0.18 0.26 0.33 0.40

I

I

Input Leakage
Current

6.0

VI=VCCor GND ±0.1 ±1 ±1 µA

I

OZ

3 State Output
Off State Current

6.0 VI=VIHor V

IL

VO=VCCor GND

±0.5 ±5.0 µA

I

CC

Quiescent Supply
Current

6.0 VI=VCCor GND 4 40 80 µA

M54/M74HC245/640/643

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