SGS Thomson Microelectronics M74HC623, M74HC620 Datasheet

M54/74HC620
M54/74HC623

OCTAL BUS TRANSCEIVER

HC620 3 STATE INVERTIN G HC623 3 STATENON INVE RTING

.HIGH SPEED

tPD= 10 ns(TYP.) AT VCC=5V

.LOWPOWERDISSIPATION

ICC=4µA(MAX.) AT TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

.OUTPUT DRIVE CAPABILITY

15 LSTTL LOADS

=28%VCC(MIN.)

B1R

(PlasticPackage)

F1R

(CeramicPackage)

.SYMMETRICALOUTPUT IMPEDANCE

|IOH|=IOL=6 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATINGVOLTAGE RANGE

VCC(OPR)= 2V to 6V

.PIN ANDFUNCTION COMPATIBLE

WITH LS620/623

M1R

(MicroPackage)

ORDER CODES :

M54HC X XXF1R M74H CXXXM1R
M74HC X XXB1R M74HCX X XC1R

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HC620/623 are high speed CMOS
OCTALBUS TRANSCEIVERS fabricated in silicon
gate C2MOS technology. They havethe same high
speed performance of LSTTL combined with true
CMOS low powerconsumption.

Theseoctalbus transceiversare designed forasyn­chronous two-way communication between data
buses. The control function implementation allows
maximumflexibility in timing.

These devices allow data transmission from the A
bus to Bbus or from the B to the A bus depending
upon the logiclevelsat theenable inputs (GBAand
GAB).The enable inputs canbe used to disable the
deviceso that the busesare effectivelyisolated.

The dual-enable configuration gives these devices
thecapabilitytostoredataby simultaneousenabling
of GBA andGAB.

Each output reinforces its input in this transceiver
configuration. Thus, when both control inputs are
enabled and all otherdata sources to the two sets
of bus lines areathigh impedance, both setsof bus
lines(16 in all) willremain attheir laststates. The 8­bit codesappearing onthe twosets of buses will be
identical for the ’HC623 or complementary for the
’HC620. Allinputsare equipped with protection cir­cuits against static discharge and transient excess
voltage.

PIN CONNECTIONS(top view)

NC =
No Internal
Connection

October 1992

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M54/M74HC620/623

INPUT AND OUTPUT EQUIVALENT CIRCUIT

TRUTH TABLE

INPUTS FUNCTION OUTPUS

GAB GBA A Bus B Bus HC620 HC623

L L Output Input A = B A = B

H H Input Output B = A B = A

L H High Impedance Z Z

H L High Impedance Z Z

LOGI C DI AG RAM

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PIN DESC RIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 19 GBA , GAB Direction Controls

2, 3, 4, 5, 6, 7, 8, 9 A1 to A8 Data Inputs/Outputs

11, 12, 13, 14, 15, 16, 17, 18 B1 to B8 Data Inputs/Outputs

10 GND Ground (0V)
20 V

CC

Positive Supply Voltage

IEC LOGIC SYMBOLS

HC620 HC6 23

M54/M74HC620/623

ABSOLU TE M AXIMU M R AT ING S

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

I

or I

CC

P

D

T

stg

T

AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevicemayoccur. Functionaloperationunder these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 35 mA
DC VCCor Ground Current ± 70 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10sec) 300

L

o

C

o

C

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M54/M74HC620/623

RECO MM ENDED OPERAT I N G CONDITI O NS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICATIONS

Symbol Parameter

V

IH

V

V

OH

V

OL

I

I

OZ

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

Low Level Input

IL

Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
3 State Output

Off State Current
Quiescent Supply

2.0
V

=

I

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

6.0

IO=-20 µA

V

IH

or

V

IL

=-6.0 mA 4.18 4.31 4.13 4.10

O

=-7.8 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 6.0 mA 0.17 0.26 0.33 0.40

O

= 7.8 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

VI=VIHor V

VO=VCCor GND

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

IL

±0.5 ±5 ±10 µA

6.0 VI=VCCor GND 4 40 80 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

V

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