SGS Thomson Microelectronics M74HC51TTR, M74HC51RM13TR, M74HC51M1R, M74HC51B1R Datasheet

M74HC51

DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE

■ HIGH SPEED:

t

= 11ns (TYP.) at VCC = 6V

PD

■ LOW POWER DISSIPATION:

I

= 1µA(MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 4mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ WIDE OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 6V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

= 28 % VCC (MIN.)

NIL

PHL

74 SERIES 51

DESCRIPTION

The M74HC51 is an hi gh speed CMOS DUAL 2
WIDE 2 INPUT AND/OR INVERT GATE
fabricated with silicon gate C

2

MOS technology.

It contains a 2-WIDE 2-INPUT AND/OR INVERT
GATE and a 2-WIDE 3-INPUT AND/OR
INVERT GATE.

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HC51B1R

SOP M74HC51M1R M74HC51RM13TR

TSSOP M74HC51TTR

The internal circuit is composed of 3 stages (2
INPUT) or 5 stages (3 INPUT) including buffer
output, which enables high noise immunity and
stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/9August 2001

M74HC51

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 12, 13, 9,

10, 11

2, 3, 4, 5 2A to 2D Data Inputs

8, 6 1Y to 2Y Data Outputs

7 GND Ground (0V)

14

TRUTH TABLE

1A 1B 1C 1D 1E 1F 1Y

HHHXXXL
XXXHHHL

ALL OTHER COMBINATIONS H

TRUTH TABLE

2A 2B 2C 2D 2Y

HHXXL
XXHHL

ALL OTHER COMBINATIONS H

X : Don’t Care

1A to 1F Data Inputs

V

CC

Positive Supply Voltage

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

P

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

; derate to 30 0m W by 10mW/°C from 65

°C

°C to 85°C

-0.5 to +7 V
V
V

± 20 mA
± 20 mA
± 25 mA
± 50 mA

500(*) mW

-65 to +150 °C

300 °C

2/9

M74HC51

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

t

r

DC SPECIFICATIONS

Symbol Parameter

V

IH

V

IL

V

OH

V

OL

I

I

I

CC

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time VCC = 2.0V

, t

f

V
V

CC
CC

= 4.5V
= 6.0V

Test Condition Value

T

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

High Level Input

V

CC

(V)

2.0 1.5 1.5 1.5

Voltage

6.0 4.2 4.2 4.2

Low Level Input

2.0 0.5 0.5 0.5

Voltage

6.0 1.8 1.8 1.8

High Level Output
Voltage

Low Level Output
Voltage

Input Leakage
Current

Quiescent Supply
Current

2.0

4.5

6.0

4.5

6.0

2.0

4.5

6.0

4.5

6.0

6.0

6.0

IO=-20 µA
I

=-20 µA

O

I

=-20 µA

O

I

=-4.0 mA

O

I

=-5.2 mA

O

IO=20 µA
I

=20 µA

O

I

=20 µA

O

I

=4.0 mA

O

I

=5.2 mA

O

= VCC or GND

V

I

= VCC or GND

V

I

1.9 2.0 1.9 1.9

4.4 4.5 4.4 4.4

5.9 6.0 5.9 5.9

4.18 4.31 4.13 4.10

5.68 5.8 5.63 5.60

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40

0.18 0.26 0.33 0.40
± 0.1 ± 1 ± 1 µA

11020µA

2 to 6 V

CC
CC

-55 to 125 °C

0 to 1000 ns

0 to 500 ns
0 to 400 ns

-40 to 85°C -55 to 125°C

V
V

Unit

V4.5 3.15 3.15 3.15

V4.5 1.35 1.35 1.35

V

V

3/9