SGS Thomson Microelectronics M74HC51 Datasheet

DUAL 2 WIDE2 INPUT AND/OR INVERTGATE

.HIGH SPEED

tPD= 10 ns (TYP.) ATVCC=5V

.LOWPOWER DISSIPATION

ICC=1µA(MAX.) AT TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

.SYMMETRICAL OUTPUT IMPEDANCE

IOH =IOL= 4 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATINGVOLTAGERANGE

VCC(OPR)= 2V TO 6 V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS51

M54HC51
M74HC51

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 51F1R M74H C51M1R
M74HC 51B1R M 74HC51C1R

(CeramicPackage)

(Chip Carrier)

F1R

C1R

DESCRIPTION

The M54/74HC51 is a high speed CMOS DUAL 2
WIDE-2INPUT AND/OR INVERTGATEfabricated
in silicon gate C2MOS technology. It has the same
high speed performance of LSTTL combined with
trueCMOSlow power consumption. It contains a 2­WIDE 2-INPUT AND-OR-INVERT GATE and a 2­WIDE3-INPUT AND-OR-INVERT GATE.

The internal circuit is composed of 3 stages (2­INPUT) or 5 stages (3-INPUT) including buffered
output, which gives high noise immunity and a
stableoutput.Allinputs areequipped withprotection
circuits against static discharge and transient ex­cess voltage.

INPUT AND OUTPUT EQUIVALENT CIRCUIT

PIN CONNECTIONS(top view)

December1992

NC =
No Internal
Connection

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M54/M74HC51

PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 12, 13, 9,

1A to 1F Data Inputs

10, 11

2, 3, 4, 5 2A to 2D Data Inputs

8, 6 1Y, 2Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

1A 1B 1C 1D 1E 1F 1Y

HHHXXXL
XXXHHHL

ALL OTHER COMBINATIONS H

TRUTH TABLE

2A 2B 2C 2D 2Y

HHXXL
XXHHL

ALL OTHER COMBINATIONS H

X =DON’T CARE

LOGI C DI AGRAM

IEC LOGIC SYMBOL

ABSOLU TE M AXIMU M R AT INGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

or I

I

CC

P

D

T

stg

T

L

AbsoluteMaximumRatingsarethose values beyond whichdamage tothedevice mayoccur.Functionaloperation under these conditionisnotimplied.
(*)500 mW:≅ 65oC derate to300 mW by 10mW/oC: 65oCto85oC

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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

o

C

o

C

M54/M74HC51

RECO MM ENDED OPERAT I N G CO NDI TIONS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICATIONS

Symbol Parameter

V

IH

V

V

OH

V

OL

I

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

Low Level Input

IL

Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
Quiescent Supply

2.0
V

=

I

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

6.0 VI=VCCor GND 1 10 20 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

V

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