.HIGH SPEED
tPD= 13 ns(TYP.) AT VCC=5V
.LOW”ON” RESISTANCE:
120 Ω TYP. (VCC-VEE=2V)
50 Ω TYP. (VCC-VEE=4.5 V)
35 Ω TYP. (VCC-VEE=9V)
.WIDEANALOGINPUTVOLTAGERANGE:±6V
.LOW CROSSTALK BETWEEN SWITCHES
.FAST SWITCHING
.SINE WAVE DISTORTION
0.020 (TYP.) AT VCC-VEE=9V
.HIGH NOISEIMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.LOW POWER DISSIPATION
ICC=1µA (MAX.) AT VCC5V
.PIN ANDFUNCTION COMPATIBLE
WITH 4316B
M54HC4316
M74HC4316
QUAD BILATERAL SWITCH
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 4316F1R M74H C4316M1R
M74HC 4316B1R M74HC4 316C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC4316 is a high speedCMOS QUAD
BILATERAL SWITCH fabricated in silicon gate
C2MOS technology. It has high speedperformance
combined withtrue CMOSlowpower consumption.
HC4316 has four independent analogue switches.
Each switch has two input/output terminals (nI/O,
nO/I and anactive highselect input (nC).
When the enable input is high all four analog switches are off. The supply voltage for the digital signals applied to VCCand GND must be within the
range 0 to 6 V. The voltage swingon the analogue
Input/Outputs can be between VCC (Positive Limit)
and VEE(Negative Limit).The voltage betweenV
and VEEmustnot exceed 12 V.
All input are equipped with protection circuits
against static discharge and transient excess voltage.
CC
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
October 1993
1/13
M54/M74HC4316
IEC LOGIC SYMBOL PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 10, 13 1 to 4 I/O Independent Inputs/Outputs
2, 3, 11, 12 1 to 4 O/I Independent Outputs/Inputs
7 E Enable Inputs (Active LOW)
15, 5, 6, 14 1C to 4C Enable Inputs (Active HIGH)
9V
8 GND Ground (0V)
16 V
TRUTH TABLE
EE
CC
Negative Supply Voltage
Positive Supply Voltage
LOGIC DIAGRAM
ENABLE CONTROL
LH ON
L L OFF
H X OFF
SWITCH FUNCTION
2/13
M54/M74HC4316
ABSOLU TE MAXIMU M RAT INGS
Symbol Parameter Value Unit
V
CC
V
CC-VEE
V
V
I/O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethose values beyond whichdamage tothedevicemayoccur. Functionaloperationunder theseconditions is notimplied.
(*)500 mW: ≅ 65oC derateto300 mW by 10mW/oC: 65oCto85oC
RECO MM ENDED OPERATI N G CONDI TIONS
Symbol Parameter Value Unit
V
CC
V
EE
V
CC-VEE
V
I
V
I/O
T
op
t
r,tf
Supply Voltage -0.5 to +7 V
Supply Voltage -0.5 to +13 V
C0ntrol Input Voltage -0.5 to VCC+ 0.5 V
I
Switch I/O Voltage VEE-0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
Supply Voltage 2 to 6 V
Supply Voltage -6 to 0 V
Supply Voltage 2 to 12 V
Input Voltage 0 to V
Switch I/O Voltage VEEto V
Operating Temperature: M54HC Series
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
= 4.5 V 0 to 500
V
CC
V
= 6 V 0 to 400
CC
o
C
o
C
V
V
o
C
o
C
3/13
M54/M74HC4316
DC SPECIFICATIO NS
Symbol Parameter
V
V
R
∆R
High Level
IHC
Control Input
Voltage
Low Level Control
ILC
Input
Voltage
ON Resistance 4.5 GND VIN=V
ON
Difference of ON
ON
Resistance
Between Switches
Test Conditions Value
V
(V)
CC
V
(V)
EE
=25oC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85oC
74HC
-55 to 125oC
54HC
T
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
70 170 200
120 180 215
=0.1mA
I/O
V
IN=VIHC
=0.1mA
I/O
IHC
toV
orV
EE
EE
V
4.5 -4.5 50 85 105
6.0 -6.0 30 70 85
I/O=VCC
I
2.0 GND
4.5 GND 50 80 100
4.5 -4.5 35 60 75
V
I/O=VCC
I
6.0 -6.0 20 40 60
4.5 GND VIN=V
4.5 -4.5 5 10 15
6.0 -6.0 5 10 15
V
I/O=VCC
I
I/O
or
IHC
V
ILC
toV
=0.1mA
10 15 20
EE
Unit
V
V
Ω
Ω
I
OFF
I
I
IZ
IN
Input/Output
Leakage Current
(SWITCH OFF)
Switch Input
Leakage Current
(SWITCH ON,
OUTPUT OPEN)
Control Input
Current
6.0 GND VOS=VCCor
GND
VIS=VCCor
6.0 -6.0
GND
V
IN=VIHC
V
or
ILC
6.0 GND VOS=VCCor
GND
6.0 -6.0
6.0
VIN=V
VI=VCCor GND 10-5±0.1 ±1 ±1 µA
or
ILC
V
IHC
±0.06 ±0.6 ±2 µA
±0.1 ±1 ±2
±0.06 ±0.6 ±2 µA
±0.1 ±1 ±2
4/13