SGS Thomson Microelectronics M74HC42TTR, M74HC42RM13TR, M74HC42M1R, M74HC42B1R Datasheet

M74HC42
BCD TO DECIMAL DECODER
HIGH SPEED :
t
= 14ns (TYP.) at VCC = 6V
PD
LOW POWER DISSIPATION:
I
=4µA(MAX.) at TA=25°C
CC
HIGH NOISE IMMUNITY:
V
= V
NIH
SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 4mA (MIN)
OH
BALANCED PROPAGATION DELAYS:
t
t
PLH
WIDE OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 6V
CC
PIN AND FUNCTION COMPATIBLE WITH
= 28 % VCC (MIN.)
NIL
PHL
74 SERIES 42
DESCRIPTION
The M74HC42 is an high speed CMOS BCD TO DECIMAL DECODER fabricated with silicon gate
2
C
MOS technology. A BCD code applied to the four inputs A-D selects one of ten de cimal outputs Y0
- Y9, which goes low to fifteen gives a high level at all outputs. This device also can be used as a 3 to LINE
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HC42B1R
SOP M74HC42M1R M74HC42RM13TR
TSSOP M74HC42TTR
DECODER, when the D input is assigned as a disable input. This device is useful for code conversion, address decoding, me mory selection, demultiplexing, or readout decoding. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/9July 2001
M74HC42
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
15, 14, 13,
12
1, 2, 3, 4, 5,
6, 7, 8, 9, 10,
11
8 GND Ground (0V)
16 Vcc Positive Supply Voltage
FUNCTIONAL TABLE
A, B, C, D Data Inputs
TO Y
Y
0
Multiplexer Outputs
9
CODE No
DCBA
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
0 LLLLLHHHHHHHHH 1 LL LHHLHHHHHHHH 2 LLHLHHLHHHHHHH 3 LLHHHHHLHHHHHH 4 LHL LHHHHLHHHHH 5 LHLHHHHHHLHHHH 6 LHHLHHHHHHLHHH 7 LHHHHHHHHHHLHH 8 HLL LHHHHHHHHLH
9 HLLHHHHHHHHHHL 10 HLHLHHHHHHHHHH 11 HLHHHHHHHHHHHH 12 HHL LHHHHHHHHHH 13 HHLHHHHHHHHHHH 14 HHHLHHHHHHHHHH 15 HHHHHHHHHHHHHH
BCD INPUTS DECIMAL OUTPUTS
Y
9
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LOGIC DIAGRAM
M74HC42
This log i c diagram has not be used to est i m at e propagation delays
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
-0.5 to +7 V V V
± 20 mA ± 20 mA ± 25 mA ± 50 mA
500(*) mW
-65 to +150 °C
300 °C
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M74HC42
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
t
r
DC SPECIFICATIONS
Symbol Parameter
V
IH
V
IL
V
OH
V
OL
I
I
I
CC
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time VCC = 2.0V
, t
f
V V
CC CC
= 4.5V = 6.0V
Test Condition Value
T
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
V
CC
(V)
2.0 1.5 1.5 1.5
Voltage
6.0 4.2 4.2 4.2
Low Level Input
2.0 0.5 0.5 0.5
Voltage
6.0 1.8 1.8 1.8
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Quiescent Supply Current
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
IO=-20 µA I
=-20 µA
O
I
=-20 µA
O
I
=-4.0 mA
O
I
=-5.2 mA
O
IO=20 µA I
=20 µA
O
I
=20 µA
O
I
=4.0 mA
O
I
=5.2 mA
O
= VCC or GND
V
I
= VCC or GND
V
I
1.9 2.0 1.9 1.9
4.4 4.5 4.4 4.4
5.9 6.0 5.9 5.9
4.18 4.31 4.13 4.10
5.68 5.8 5.63 5.60
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40
0.18 0.26 0.33 0.40 ± 0.1 ± 1 ± 1 µA
44080µA
2 to 6 V
CC CC
-55 to 125 °C
0 to 1000 ns
0 to 500 ns 0 to 400 ns
-40 to 85°C -55 to 125°C
V V
Unit
V4.5 3.15 3.15 3.15
V4.5 1.35 1.35 1.35
V
V
AC ELECTRICAL CHARACTERISTICS (C
Test Condition Value
Symbol Parameter
t
TLH tTHL
t
PLH tPHL
Output Transition Time
Propagation Delay Time
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V
CC
(V)
2.0 30 75 95 110
6.0 7131619
2.0 64 130 165 195
6.0 14 22 28 33
= 50 pF, Input tr = tf = 6ns)
L
T
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
Unit
ns4.5 8151922
ns4.5 16 26 33 39
M74HC42
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circui t). Averag e operating current can be obtained by the following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.0 60 pF
5.0 5101010pF
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
TEST CIRCUIT
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC
CC(opr)
Unit
CL = 50pF or equivalent (includes jig and p robe capacit ance)
= Z
R
of pulse generator (typically 50)
T
OUT
WAVEFORM : PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
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M74HC42
Plastic DIP-16 (0.25) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065 b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
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P001C
SO-16 MECHANICAL DATA
M74HC42
DIM.
A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019 c1 45° (typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S8° (max.)
MIN. TYP MAX. MIN. TYP. M AX.
mm. inch
PO13H
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M74HC42
TSSOP16 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. M AX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 4.9 5 5.1 0.193 0.197 0.201
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
c
K
L
E
D
E1
PIN 1 IDENTIFICATION
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1
0080338D
M74HC42
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