SGS Thomson Microelectronics M74HC42TTR, M74HC42RM13TR, M74HC42M1R, M74HC42B1R Datasheet

M74HC42
BCD TO DECIMAL DECODER
HIGH SPEED :
t
= 14ns (TYP.) at VCC = 6V
PD
LOW POWER DISSIPATION:
I
=4µA(MAX.) at TA=25°C
CC
HIGH NOISE IMMUNITY:
V
= V
NIH
SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 4mA (MIN)
OH
BALANCED PROPAGATION DELAYS:
t
t
PLH
WIDE OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 6V
CC
PIN AND FUNCTION COMPATIBLE WITH
= 28 % VCC (MIN.)
NIL
PHL
74 SERIES 42
DESCRIPTION
The M74HC42 is an high speed CMOS BCD TO DECIMAL DECODER fabricated with silicon gate
2
C
MOS technology. A BCD code applied to the four inputs A-D selects one of ten de cimal outputs Y0
- Y9, which goes low to fifteen gives a high level at all outputs. This device also can be used as a 3 to LINE
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HC42B1R
SOP M74HC42M1R M74HC42RM13TR
TSSOP M74HC42TTR
DECODER, when the D input is assigned as a disable input. This device is useful for code conversion, address decoding, me mory selection, demultiplexing, or readout decoding. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/9July 2001
M74HC42
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
15, 14, 13,
12
1, 2, 3, 4, 5,
6, 7, 8, 9, 10,
11
8 GND Ground (0V)
16 Vcc Positive Supply Voltage
FUNCTIONAL TABLE
A, B, C, D Data Inputs
TO Y
Y
0
Multiplexer Outputs
9
CODE No
DCBA
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
0 LLLLLHHHHHHHHH 1 LL LHHLHHHHHHHH 2 LLHLHHLHHHHHHH 3 LLHHHHHLHHHHHH 4 LHL LHHHHLHHHHH 5 LHLHHHHHHLHHHH 6 LHHLHHHHHHLHHH 7 LHHHHHHHHHHLHH 8 HLL LHHHHHHHHLH
9 HLLHHHHHHHHHHL 10 HLHLHHHHHHHHHH 11 HLHHHHHHHHHHHH 12 HHL LHHHHHHHHHH 13 HHLHHHHHHHHHHH 14 HHHLHHHHHHHHHH 15 HHHHHHHHHHHHHH
BCD INPUTS DECIMAL OUTPUTS
Y
9
2/9
LOGIC DIAGRAM
M74HC42
This log i c diagram has not be used to est i m at e propagation delays
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
-0.5 to +7 V V V
± 20 mA ± 20 mA ± 25 mA ± 50 mA
500(*) mW
-65 to +150 °C
300 °C
3/9
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