14 STAGE BINARY COUNTER/OSCILLATOR
.HIGH SPEED
f
= 58 MHz (TYP.) AT VCC=5V
MAX
.LOWPOWER DISSIPATION
ICC=4µA(MAX.) AT TA=25°C
.HIGH NOISE IMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICAL OUTPUT IMPEDANCE
|IOH|=IOL=4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATING VOLTAGERANGE
VCC(OPR)= 2 V TO 6 V
.PIN AND FUNCTION COMPATIBLE
WITH 4060B
M54HC4060
M74HC4060
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 4060F1R M74H C4060M1R
M74HC 4060B1R M74HC4 060C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC4060 is a high speed CMOS 14STAGE BINARY COUNTER/OSCILLATOR fabricated in silicongate C2MOS technology.It hasthe
same high speed performance of LSTTL combined
withtrueCMOSlowpowerconsumption. It operates
ten timesfasterthan metal-gate C2MOSIC (4060B)
with the same power dissipation.
The oscillator configuration allows design of either
RC or crystal oscillator circuits. A high level on the
CLEAR accomplishes the reset function, i.e. all
counter outputs are made low and the oscillator is
disabled.
A negative transition on the clock input increments
the counter. Ten kinds of divided output are provided ; 4 to 10 and 12 to 14 stage inclusive. The
maximumdivision available at Q12 is 1/16384 f oscillator.
The Ø1input and the CLEAR input are equipped
with protectioncircuitsagainst staticdischarge and
transient excess voltage.
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
March1993
1/12
M54/M74HC4060
INPUT AND OUTPUT EQUIVALENT CIRCUIT
TRUTH TABLE
øI CLEAR FUNCTION
COUNTER IS RESET TO ZERO STATE
XH
L COUNT UP ONE STEP
L NO CHANGE
X:DON’TCARE
ø0 OUTPUT GOES TO HIGH LEVEL
ø0 OUTPUT GOES TO LOW LEVEL
LOGIC DIAGRAM
2/12
M54/M74HC4060
PIN DESCRIPTION
IEC LOGIC SYMBOL
PIN No SYMBOL NAME AND FUNCTION
1, 2, 3 Q12 to Q14 Counter Outputs
7, 5, 4, 6,
Q4 to Q10 Counter Outputs
14, 13, 15
9 øO External Capacitor
Connection
10 øO External Resistor
Connection
11 øI Clock Input/Oscillator Pin
12 CLEAR Master Reset
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
ABSOLU TE M AXIMU M R AT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethosevalues beyond whichdamagetothedevicemayoccur.Functionaloperationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derate to300 mWby 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10sec) 300
L
o
C
o
C
RECO MM ENDED OPERATING C ONDITIONS
Symbol Parameter Value Unit
V
T
t
V
V
r,tf
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
= 6 V 0 to 400
V
CC
V
V
o
C
o
C
3/12
M54/M74HC4060
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
V
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level
OH
Output Voltage
(Q Outputs)
Low Level Output
OL
Voltage
(Q Outputs)
High Level
OH
Output Voltage
(øO, øO Output)
Test Conditions Value
V
(V)
CC
=25oC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85oC
74HC
-55 to 125oC
54HC
T
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
2.0
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
V
I
V
IH
or
V
V
I
V
IH
or
V
=
IO=-20 µA
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
=
IO=20µA
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
2.0 VI=
V
IH
4.5 4.4 4.5 4.0 4.0
6.0 5.5 5.9 5.5 5.5
or
V
IL
IO=-20 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
1.8 2.0 1.8 1.8
Unit
V
V
V
V
V
V
Low Level Output
OL
Voltage
(øO, øO Output)
Input Leakage
I
I
Current
I
Quiescent Supply
CC
2.0 VI=
V
IH
4.5 0.0 0.5 0.5 0.5
6.0 0.1 0.5 0.5 0.5
6.0
IO=20µA
or
V
IL
VI=VCCor GND ±0.1 ±1 ±1 µA
6.0 VI=VCCor GND 4 40 80 µA
0.0 0.2 0.2 0.2
V
Current
4/12