SGS Thomson Microelectronics M74HC4050, M74HC4049 Datasheet
HC4049 HEX BUFFER/CONVERTER (INVERTER)
.HIGH SPEED
tPD= 9 ns (TYP.)AT VCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.HIGH NOISE IMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
.SYMMETRICAL OUTPUT IMPEDANCE
|IOH|=IOL=6 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATING VOLTAGERANGE
VCC(OPR)= 2 V TO 6 V
.PIN AND FUNCTION COMPATIBLE
WITH 4049B/4050B
M54/74HC4049
M54/74H C4050
HC4050 HEX BUFFER/CONVERTER
B1R
(Plastic Package)
M1R
(Micro Package)
ORDER CODES :
M54HC XXX X F 1R M74HCXXXXM1R
M74HC XXXXB1R M74HCXXXXC 1R
(Ceramic Package)
F1R
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC4049 and the M54/74HC4050 are
high speed CMOS HEX BUFFER fabricated in silicon gate C2MOS technology.
They have the same high speed performance of
LSTTL combined with true CMOS low power consumption.
The M54/75HC4049 is an invertingbuffer,whilethe
M54/74HC4050 is a non-inverting buffer.
The internal circuit is composed of 3 stage or 2stageinverters, whichprovides high noise immunity
and a stable output.
Input protection circuits are different from those of
the high speed CMOS IC’s.
The VCC side diodes are designed to allow logiclevel convertion from high-level voltages (up to
15 V) to low-level voltages.
PIN CONNECTIONS(top view)
HC4049
HC4050
NC =
No Internal
Connection
March1993
1/11
M54/M74HC4049/ 4050
CIRCUIT SCHEMATIC (Per Gate)
HC4049 HC405 0
CHIP CARRIER
HC4049 HC405 0
NC =No InternalConnection
TRUTH TABLE (HC4049)
INPUT OUTPUT
nA nY
LH
HL
2/11
TRUTH TABLE (HC 4 050)
INPUT OUTPUT
nA nY
LL
HH
M54/M74HC4049/4050
PIN DESCRIPTION (HC4049)
PIN No SYMBOL NAME AND FUNCTION
2, 4, 6, 10,
1Y to 6Y Data Outputs
12, 15
3, 5, 7, 9,
1A to 6A Data Inputs
11, 14
13, 16 NC Not Connected
8 GND Ground (0V)
1V
CC
Positive Supply Voltage
IEC LOGIC SYMBOLS
PIN DESCRIPTIO N (H C4050)
PIN No SYMBOL NAME AND FUNCTION
2, 4, 6, 10,
12, 15
3, 5, 7, 9,
11, 14
13, 16 NC Not Connected
8 GND Ground (0V)
1V
1Y to 6Y Data Outputs
1A to 6A Data Inputs
CC
Positive Supply Voltage
HC4050HC404 9
ABSOLU TE M AXI MU M R AT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevicemayoccur. Functional operationunder these conditionisnotimplied.
(*)500 mW:≅ 65oC derate to300 mW by 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
L
o
C
o
C
3/11
M54/M74HC4049/ 4050
RECO MM ENDED OPERAT IN G CONDI TI ONS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICATIO NS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
2.0
V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
IO=-20 µA
V
IH
or
V
IL
=-6.0 mA 4.18 4.31 4.13 4.10
O
=-7.8 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 6.0 mA 0.17 0.26 0.33 0.40
O
= 7.8 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND
VI=15V
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
±0.1
±0.5
±1
±5
6.0 VI=VCCor GND 1 10 20 µA
Current
54HC
±1 µA
V
V
o
C
o
C
Unit
V
V
V
V
4/11
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