.HIGH SPEED
tPD= 18 ns(TYP.) AT VCC=5V
.LOWPOWERDISSIPATION
ICC=4µA(MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICALOUTPUT IMPEDANCE
|IOH|=IOL=4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGE RANGE
VCC(OPR)= 2V TO 6 V
.PIN ANDFUNCTION COMPATIBLE
WITH 4028B
M54HC4028
M74HC4028
BCD TO DECIMAL DECODER
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 4028F1R M74H C4028M1R
M74HC 4028B1R M74HC4 028C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC4028 is a high speed CMOS BCDTO-DECIMALDECODER fabricated in silicon gate
C2MOStechnology. Ithasthesamehighspeedperformance of LSTTL combined with true CMOS low
powerconsumption. ABCD codeapplied tothe four
inputs (Ato D) provides a highlevel at the selected
one ofthe decimal decoded outputs. An illegal BCD
code such as eleven to fifteen gives a low level at
all outputs. The device also can be used as 3-TO8-LINE DECODER,when D input is assigned as a
disable input. The device is useful for code conversion,addressdecoding, memoryselection, demultiplexing, or read out decoding.
All inputs are equipped with protection circuits
against static discharge and transient excess voltage.
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
October 1992
1/10
M54/M74HC4028
TRUTH TABLE
INPUTS OUTPUTS SELECTED
DCBAY0Y1Y2Y3Y4Y5Y6Y7Y8Y9
LLLLHLLLLLLLLL Y0
LLLHLHLLLLLLLL Y1
LLHLLLHLLLLLLL Y2
LLHHLLLHLLLLLL Y3
LHLLLLLLHLLLLL Y4
LHLHLLLLLHLLLL Y5
LHHLLLLLLLHLLL Y6
LHHHLLLLLLLHLL Y7
HLLLLLLLLLLLHL Y8
HLLHLLLLLLLLLH Y9
HXHXLLLLLLLLLL NOTE
HHXXLLLLLLLLLL NOTE
X:DON’TCARE
LOGIC DIAGRAM
OUTPUTT
2/10
INPUT AND OUTPUT EQUIVALENT CIRCUIT
M54/M74HC4028
PIN DESCRIPTION
IEC LOGIC SYMBOL
PIN No SYMBOL NAME AND FUNCTION
1, 2, 3, 4, 5,
Y0 to Y9 Decoder Outputs
6, 7, 9, 14,
15
10, 11, 13,
A to D Data Inputs
12
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
ABSOLU TE MAXIMU M RAT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethose values beyond whichdamage tothedevicemayoccur. Functional operation under these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
L
o
C
o
C
3/10
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