SGS Thomson Microelectronics M74HC4016 Datasheet

.HIGH SPEED

tPD= 9 ns (TYP.)AT VCC=5V

.LOWPOWERDISSIPATION

ICC=1µA(MAX.) AT TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.LOW ”ON” RESISTANCE

RON=60Ω(TYP.)AT VCC= 9 V, I

=100 µA

I/O

.SINE WAVE DISTORSION

0.042 % (TYP.) AT VCC=9VPP, f = 1KHz

.WIDE OPERATINGVOLTAGE RANGE

VCC(OPR)= 2V TO 12 V

.PIN ANDFUNCTION COMPATIBLE

WITH 4016B

M54HC4016 M74HC4016

QUAD BILATERAL SWITCH

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 4016F1R M74H C4016M1R M74HC 4016B1R M74HC4 016C1R

F1R

(CeramicPackage)

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HC4016 is a high speedCMOS QUAD BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It has high speed performance combined withtrue CMOSlowpower consumption.

The C input is provided to control the switch ; the switch is ON when the C input is held high and off when Cis held low.

PIN CONNECTIONS(top view)

NC = No Internal Connection

October 1993

1/11

M54/M74HC4016

LOGIC DIAGRAM IEC LOGIC SYMBOL

PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1,4, 8, 11 1 to 4 I/O Independent

Inputs/Outputs

TRUTH TABLE

CONTROL SWITCH FUNCTION

HON

L OFF

2,3, 9, 10 1 to 4 O/I Independent

Outputs/Inputs

13,5, 6,12 1C to4C Enable Inputs (Active

HIGH)

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

ABSOLU TE MAXIMU M RAT ING

Symbol Parameter Value Unit

V

CC

V

IN

V

I/O

I

OK

I

I/OK

I

O

I

orI

CC

P

T

stg

T

AbsoluteMaximumRatingsarethose values beyond whichdamage tothedevicemayoccur. Functional operation under these conditionisnotimplied. (*)500 mW: ≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to+13 V DC Input Voltage -0.5 toVCC+0.5 V DC Input/Output Voltage -0.5 toVCC+0.5 V Control Input DC Diode Current ± 20 mA I/O DC Diode Current ± 20 mA DC Output Source Sink Current Per Output Pin ± 25 mA DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500(*) mW

D

Storage Temperature -65to +150 Lead Temperature (10 sec) 300

L

o

C

o

C

2/11

M54/M74HC4016

RECO MM ENDED OPERATI N G CONDI TIONS

Symbol Parameter Value Unit

V

T

t

r,tf

DC SPECIFICATIO NS

Symbol Parameter

V

IHC

V

ILC

R

ON

∆R

I

OFF

I

IZ

I

IN

I

CC

Supply Voltage 2 to 12 V

CC

Input Voltage (Control) 0 to V

I

Input/Output Voltage 0 to V

I/O

Operating Temperature: M54HC Series

op

M74HC Series

CC CC

-55to +125

-40to +85

Input Rise and Fall Time VCC= 2 V 0 to1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

V

= 10 V 0 to 250

CC

Test Conditions Value

T

High Level Control Input Voltage

=25oC

V

(V)

CC

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

9.0 6.3 6.3 6.3

-40 to 85oC 74HC

-55 to 125oC

12.0 8.4 8.4 8.4

Low Level Control Input Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

9.0 2.5 2.5 2.5

12.0 3.6 3.6 3.6

ON Resistance 4.5 VIN=V

9.0 85 170 213 260

12.0 60 120 150 180

4.5 V

9.0 60 120 150 200

12.0 50 100 125 150

Difference of ON

ON

Resistance Between Switches

4.5

9.0 9

12.0 6

Input/Output Leakage Current

12.0

(SWITCH OFF) Switch Input

Leakage Current (SWITCH ON,

12.0

=100µA

I/O

IN=VIHC

=100µA

I/O

V

IN=VIHC

≤ 100 µA

I/O

IHC

toGND

orGND

V

I/O=VCC

I

V

I/O=VCC

I

V

I/O=VCC

I

VOS=VCCorGND

VIS=VCCorGND

VIN=V

ILC

VOS=VCCorGND

VIN=V

IHC

160 320 400 450

80 160 200 250

16

±0.1 ±1 ±2 µA

OUTPUT OPEN) Control Input

Current Quiescent Supply

Current

VIN=VCCorGND ±0.1 ±1 ±1 µA

6.0

6.0 VIN=VCCorGND 1 10 20 µA

9.0 4 40 80

12.0 8 80 160

54HC

V V

o

C

o

C

Unit

V

Ω

3/11

M54/M74HC4016

AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)

Test Conditions Value

T

=25oC

Symbol Parameter

ø

Phase Difference

I/O

Between Input and Output

V

CC

(V)

2.0 20506575

4.5 5 10 13 15

9.0 4 8 10 12

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

12.0 3 7 9 11

t

PZL PZH

Output Enable Time

2.0 RL=1KΩ 40 100 125 150

4.5 10202530

9.0 8 15 20 24

12.0 7141821

t

PLZ

t

PHZ

Output Disable Time

2.0 RL=1KΩ 60 150 190 225

4.5 15303845

9.0 10263336

12.0 8243032

C

PD

Input Capacitance 5 10 10 10 pF

IN

Switch Terminal

I/O

Capacitance Feed Through

IOS

Capacitance

(*) Power Dissipation

9.0

5.0 15

5

1

Capacitance

(*) CPDisdefined as the value ofthe IC’sinternal equivalent capacitance whichis calculated fromthe operatingcurrentconsumption without load. (Referto Test Circuit). Average operting current canbe obtained by the followingequation. ICC(opr) = CPD•VCC•fIN+I

-40 to 85oC 74HC

-55 to 125oC 54HC

CC

Unit

ns

pF

ANALO G SWITC H CHAR ACTE R ISTI CS (GND = 0 V TA=25oC)

Test Conditions Value

Symbol Parameter

Sine Wave Distortion (THD) 4.5 4.5 f

f

MAX

Frequency Response (Switch ON)

Feedthrough Attenuation (Switch OFF)

Crosstalk (Control Input to Signal Output)

Crosstalk (Between Any Switches)

V

VIN

CC

(V)

(Vp-p)

= 1 KHz RL=10KΩ CL= 50 pF 0.118

IN

9.0 9.0 0.042

12.0 12.0 0.032

4.5 Adjust fINvoltage to Obtain 0 dBm at VOS.

9.0 38

12.0 42

4.5 V

9.0 -50

Increase fINFrequency until dB Meter reads -3dB

RL=50Ω CL=50pF

iscentered atVCC/2. Adjust inputfor 0 dBm

IN

RL=600 Ω CL=50pF fIN=1 MHz sine wave

12.0 -50

4.5 R

9.0 23

=600Ω CL=50pF

L

fIN=1 MHz squarewave (tr=tf=6ns)

12.0 40

4.5 Adjust V R

=600 Ω CL=50pF fIN=1 MHz sine wave

9.0 -50

L

toObtain 0 dBm at input

IN

12.0 -50

Typ.

23

-50

8

-50

Unit

%

MHz

dB

mV

dB

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