SGS Thomson Microelectronics M74HC4002 Datasheet

.HIGH SPEED
tPD= 10 ns(TYP.) AT VCC=5V
.LOWPOWERDISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICALOUTPUT IMPEDANCE
|IOH|=IOL=4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGE RANGE
VCC(OPR)= 2V TO6 V
.PIN ANDFUNCTION COMPATIBLE
WITH 4002B
M54HC4002 M74HC4002
DUAL 4 INPUT NOR GATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 4002F1R M74H C4002M1R M74HC 4002B1R M74HC4 002C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC4002 is a high speed CMOS DUAL 4-INPUT NOR GATE fabricated in silicon gate C2MOS technology.
It has the same high speed performance of LSTTL combined withtrue CMOSlowpower consumption. The internal circuit is composed of 3 stages includ­ing buffer output, which ensures high noise im­munityand stableoutput.
All inputs are equipped with protection circuits against static discharge and transient excess volt­age.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN CONNECTIONS(top view)
NC = No Internal Connection
October 1992
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M54/M74HC4002
TRUTH TABLE
nA nB nC nD nY
LLLLH HXXXL XHXXL XXHXL XXXHL
PIN DESC RIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 13 1Y to 2Y Data Outputs
2, 9 1A to 2A Data Inputs 3, 10 1B to 2B Data Inputs 4, 11 1C to 2C Data Inputs 5, 12 1D to 4D Data Inputs
6, 8 NC Not Connected
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
SCHEM ATIC CIRCUI T (Per Gate)
IEC LOGIC SYMBOL
ABSOLU TE M AXIMU M R AT ING
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethose valuesbeyond whichdamage to thedevice mayoccur.Functional operation under these conditionisnotimplied. (*)500 mW: 65oC derateto300 mWby 10mW/oC: 65oCto85oC
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Supply Voltage -0.5 to +7 V DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V DC Input Diode Current ± 20 mA DC Output Diode Current ± 20 mA DC Output Source Sink Current Per Output Pin ± 25 mA DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW Storage Temperature -65 to +150 Lead Temperature (10sec) 300
o
C
o
C
M54/M74HC4002
RECO MM ENDED OPERAT I N G CO NDI TIONS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICATIONS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC 74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level Output Voltage
Low Level Output Voltage
Input Leakage
I
Current Quiescent Supply
2.0 V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 1 10 20 µA
Current
54HC
V V
o
C
o
C
Unit
V
V
V
V
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