SGS Thomson Microelectronics M74HC386 Datasheet
.HIGH SPEED
tPD= 10 ns(TYP.) ATVCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.HIGH NOISE IMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTLLOADS
.SYMMETRICALOUTPUT IMPEDANCE
|IOH|=IOL=4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATING VOLTAGERANGE
VCC(OPR)= 2 V TO6 V
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS386
DESCRIPTION
M54HC386
M74HC386
QUAD EXCLUSIVE OR GATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 386F1R M74H C386M1R
M74HC 386B1R M74HC3 86C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
The M54/74HC386 is a high speed CMOS QUAD
EXCLUSIVE-OR GATE fabricated in silicon gate
C2MOS technology.
It has the same high speed performance of LSTTL
combined with true CMOSlow powerconsumption.
An output buffer provides high noise immunity and
a stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN CONNECTIONS (top view)
NC =
No Internal
Connection
February 1993
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M54/M74HC386
TRUTH TABLE
ABY
LLL
LHH
HLH
HHL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 2, 5, 6,
8, 9, 12, 13
1A, 1B, 2A,
2B, 3A, 3B,
Data Inputs
4A, 4B
3, 4, 10, 11 1Y to 4Y Data Outputs
7 GND Ground(0V)
14 V
CC
Positive Supply Voltage
SCHEM ATIC C IRCUI T (Per Gate)
IEC LOGIC SYMBOL
ABSOLU TE MAXIMU M RAT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamage tothedevicemayoccur.Functionaloperationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derateto 300 mWby 10mW/oC: 65oCto85oC
2/9
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C
M54/M74HC386
RECO MM ENDED OPERATING C ONDI TI O NS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICA TIONS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
2.0
V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 1 10 20 µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
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