SGS Thomson Microelectronics M74HC375 Datasheet
.HIGH SPEED
tPD= 14 ns(TYP.) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.HIGH NOISE IMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICALOUTPUT IMPEDANCE
|IOH|=IOL=4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATING VOLTAGERANGE
VCC(OPR)= 2 V TO 6 V
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS375
M54HC375
M74HC375
QUAD D TYPE LATCH
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 375F1R M74H C375M1R
M74HC 375B1R M74HC3 75C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC375isahigh speedCMOSQUADD
TYPE LATCH fabricated in silicon gate C2MOS
technology. It has the same high speed performanceofLSTTL combinedwithtrue CMOSlowpower
consumption. It contains twogroupsof 2-bit latches
controlled by an enable input(G1.2orG3.4).
Thesetwolatchgroups can be usedinthe different
circuits.Each latch hasQ and Q outputs(1Q to 4Q
and 1Q to 4Q). The data applied to the data input is
transferred to theQ and Q outputs whenthe enable
input is taken high and the outputs will follow the
data input as long as the enable inputis kept high.
When the enable inputis takenlow, the information
data applied to thedata inputat that timeis retained
at the outputs.
All inputs are equipped with protection circuits
against static discharge and transient excess voltage.
PIN CONNECTIONS (top view)
NC =
No Internal
Connection
February 1993
1/11
M54/M74HC375
TRUTH TABLE
INPUTS OUTPUTS
DGQQ
LHLH
HHHL
X L Qn Qn LATCH
X:DON’T CARE
LOGIC DIAGRAM
FUNCTION
INPUT AND OUTPUT EQUIVALENT CIRCUIT
2/11
M54/M74HC375
PIN DESCRIPTION
IEC LOGIC SYMBOL
PIN No SYMBOL NAME AND FUNCTION
1, 7, 9, 15 1D to 4D Data Inputs
3, 5, 11, 13,
2, 6, 10, 14
1Q to 4Q
1Q to 4Q
Outputs
4 G1- 2 Enable Input
12 G3 - 4 Enable Input
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
ABSOLU TE M AXIMU M R AT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethose values beyondwhichdamagetothedevice mayoccur. Functionaloperationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derateto 300 mWby 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
L
o
C
o
C
RECO MM ENDED OPERAT I N G C ONDI TIONS
Symbol Parameter Value Unit
V
T
t
V
V
r,tf
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
= 6 V 0 to 400
V
CC
V
V
o
C
o
C
3/11
M54/M74HC375
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level
OH
Output Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
Test Conditions Value
V
(V)
CC
=25oC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85oC
74HC
-55 to 125oC
54HC
Unit
T
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
2.0
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
=
V
I
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 2 20 40 µA
V
V
V
V
4/11
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