The M54/74HC375isahigh speedCMOSQUADD
TYPE LATCH fabricated in silicon gate C2MOS
technology. It has the same high speed performanceofLSTTL combinedwithtrue CMOSlowpower
consumption. It contains twogroupsof 2-bit latches
controlled by an enable input(G1.2orG3.4).
Thesetwolatchgroups can be usedinthe different
circuits.Each latch hasQ and Q outputs(1Q to 4Q
and 1Q to 4Q). The data applied to the data input is
transferred to theQ and Q outputs whenthe enable
input is taken high and the outputs will follow the
data input as long as the enable inputis kept high.
When the enable inputis takenlow, the information
data applied to thedata inputat that timeis retained
at the outputs.
All inputs are equipped with protection circuits
against static discharge and transient excess voltage.
Supply Voltage-0.5 to +7V
DC Input Voltage-0.5 to VCC+ 0.5V
I
DC Output Voltage-0.5 to VCC+ 0.5V
DC Input Diode Current± 20mA
DC Output Diode Current± 20mA
DC Output Source Sink Current Per Output Pin± 25mA
DC VCCor Ground Current± 50mA
GND
Power Dissipation500 (*)mW
Storage Temperature-65 to +150
Lead Temperature (10 sec)300
L
o
C
o
C
RECO MM ENDED OPERAT I N G C ONDI TIONS
SymbolParameterValueUnit
V
T
t
V
V
r,tf
Supply Voltage2 to 6V
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall TimeVCC= 2 V0 to 1000ns
V
= 4.5 V0 to 500
CC
= 6 V0 to 400
V
CC
V
V
o
C
o
C
3/11
M54/M74HC375
DC SPECIFICATIONS
SymbolParameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level
OH
Output Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
Test ConditionsValue
V
(V)
CC
=25oC
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
-40 to 85oC
74HC
-55 to 125oC
54HC
Unit
T
2.01.51.51.5
4.53.153.153.15
6.04.24.24.2
2.00.50.50.5
4.51.351.351.35
6.01.81.81.8
2.0
4.54.44.54.44.4
6.05.96.05.95.9
4.5I
6.0I
2.0
4.50.00.10.10.1
6.00.00.10.10.1
4.5I
6.0I
6.0
=
V
I
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.184.314.134.10
O
=-5.2 mA 5.685.85.635.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA0.170.260.330.40
O
= 5.2 mA0.180.260.330.40
O
VI=VCCor GND±0.1±1±1µA
1.92.01.91.9
0.00.10.10.1
6.0 VI=VCCor GND22040µA
V
V
V
V
4/11
M54/M74HC375
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)
Test ConditionsValue
T
=25oC
SymbolParameter
t
t
TLH
THL
Output Transition
Time
V
CC
(V)
2.0307595110
4.58151922
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
6.07131619
t
PLH
t
PHL
Propagation
Delay Time
(DATA - Q, Q)
t
t
PLH
PHL
Propagation
Delay Time
(G - Q, Q)
t
(W)H
Minimum Enable
Pulse Width
(G)
Minimum Set-up
t
s
Time
(DATA - G)
Minimum Hold
t
h
Time
(DATA - G)
C
C
PD
Input Capacitance5101010pF
IN
(*)Power Dissipation
2.056115145175
4.514232935
6.012202530
2.052105130160
4.513212632
6.011182227
2.0127595115
4.53151923
6.03131620
2.0207595115
4.55151923
6.04131620
2.0000
4.5000
6.0000
52
Capacitance
(*) CPDisdefined as the valueof the IC’s internal equivalent capacitance which is calculated fromthe operatingcurrent consumption without load.
(Referto Test Circuit).Average operting current can be obtained bythe followingequation. ICC(opr) = CPD•VCC•fIN+I
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication or otherwise under any patent or patentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
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