SGS Thomson Microelectronics M74HC368, M74HC367 Datasheet

HC367 NON INVERTING, HC368 INVERTING

.HIGH SPEED

tPD= 11 ns(TYP.) AT VCC=5V

.LOWPOWERDISSIPATION

ICC=4µA(MAX.) AT TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

15 LSTTL LOADS

.SYMMETRICALOUTPUT IMPEDANCE

|IOH|=IOL=6 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATINGVOLTAGERANGE

VCC(OPR)= 2V TO 6 V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS367/368

M54/M74HC367
M54/M74HC368

HEX BUS BUFFER(3-STATE)

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC X XXF 1 R M74H CXXXM1 R
M74HC X XXB1R M74H CXXXC1R

F1R

(CeramicPackage)

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HC367 andtheM54/74HC368are high
speedCMOS HEXBUS BUFFER (3-STATE) fabri­catedin silicongateC2MOStechnology. Theyhave
the same high speed performance of LSTTL com­bined with true CMOS low power consumption.
These devices contain six buffers, fourbuffers are
controlledbyan enableinput (G1)and theother two
buffers are controlled by the other enable input
(G2); theoutputs of each buffer groupare enabled
when G1 and/or G2 inputs are held low, and
when held high these outputs are disabled to be
high-impedance.

Theseoutputs arecapable ofdrivingupto15LSTTL
loads. The designer has a choice of non-inverting
outputs (HC367) and inverting outputs (HC368).

All inputs are equipped with protection circuits
against static discharge and transient excess volt­age.

PIN CONNECTIONS(top view)

HC368

HC367

October 1992

1/11

M54/M74HC367/368

INPUT AND OUTPUT EQUIVALENT CIRCUIT

CHIP CARRIER

HC367 HC368

TRUTH TABLE

INPUTS OUTPUTS

G An Y n (367) Yn (368)

LLLH
LHHL

HXZZ

X = DON’T CARE Z =HIGH IMPEDANCE

PIN DESCRIPTION (HC367)

PIN No SYMBOL NAME AND FUNCTION

1, 15 G1, G2 Output Enable Inputs

2, 4, 6, 10,

12, 14

3, 5, 7, 9,

11, 13

8 GND Ground (0V)

16 V

1A to 6A Data Inputs

1Y to 6Y Data Outputs

CC

Positive Supply Voltage

NC = No Internal Connection

PIN DESCRIPTION (H C 3 68 )

PIN No SYMBOL NAME AND FUNCTION

1, 15 G1, G2 Output Enable Inputs

2, 4, 6, 10,

12, 14

3, 5, 7, 9,

11, 13

8 GND Ground (0V)

16 V

1A to 6A Data Inputs

1Y to 6Y Data Outputs

CC

Positive Supply Voltage

2/11

M54/M74HC367/368

IEC LOGIC SYMBOL

HC367 HC368

ABSOLU TE MAXI MUM RAT I NG S

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

or I

I

CC

P

D

T

stg

T

AbsoluteMaximumRatingsarethosevalues beyondwhichdamagetothedevice mayoccur.Functionaloperationunder theseconditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink CurrentPer OutputPin ± 35 mA
DC VCCor Ground Current ± 70 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

L

o

C

o

C

RECO MM ENDED OPERATIN G CONDITI O NS

Symbol Parameter Value Unit

V

T

t

V

V

r,tf

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

= 6 V 0 to 400

V

CC

V
V

o

C

o

C

3/11

M54/M74HC367/368

DC SPECIFICA TIONS

Symbol Parameter

V

V

V

V

I

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level

OH

Output Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
3 State Output

OZ

Off State Current
Quiescent Supply

CC

Current

Test Conditions Value

V

(V)

CC

=25oC

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85oC
74HC

-55 to 125oC
54HC

Unit

T

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

2.0

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

6.0

=

V

I

IO=-20 µA

V

IH

or

V

IL

=-6.0 mA 4.18 4.31 4.13 4.10

O

=-7.8 mA 5.68 5.8 5.63 5.60

O

=

V

I

IO=20µA

V

IH

or

V

IL

= 6.0 mA 0.17 0.26 0.33 0.40

O

= 7.8 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

VI=VIHor V

VO=VCCor GND

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

IL

±0.5 ±5 ±10 µA

6.0 VI=VCCor GND 4 40 80 µA

V

V

V

V

4/11