SGS Thomson Microelectronics M74HC368, M74HC367 Datasheet

HC367 NON INVERTING, HC368 INVERTING

.HIGH SPEED

tPD= 11 ns(TYP.) AT VCC=5V

.LOWPOWERDISSIPATION

ICC=4µA(MAX.) AT TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

15 LSTTL LOADS

.SYMMETRICALOUTPUT IMPEDANCE

|IOH|=IOL=6 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATINGVOLTAGERANGE

VCC(OPR)= 2V TO 6 V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS367/368

M54/M74HC367
M54/M74HC368

HEX BUS BUFFER(3-STATE)

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC X XXF 1 R M74H CXXXM1 R
M74HC X XXB1R M74H CXXXC1R

F1R

(CeramicPackage)

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HC367 andtheM54/74HC368are high
speedCMOS HEXBUS BUFFER (3-STATE) fabri­catedin silicongateC2MOStechnology. Theyhave
the same high speed performance of LSTTL com­bined with true CMOS low power consumption.
These devices contain six buffers, fourbuffers are
controlledbyan enableinput (G1)and theother two
buffers are controlled by the other enable input
(G2); theoutputs of each buffer groupare enabled
when G1 and/or G2 inputs are held low, and
when held high these outputs are disabled to be
high-impedance.

Theseoutputs arecapable ofdrivingupto15LSTTL
loads. The designer has a choice of non-inverting
outputs (HC367) and inverting outputs (HC368).

All inputs are equipped with protection circuits
against static discharge and transient excess volt­age.

PIN CONNECTIONS(top view)

HC368

HC367

October 1992

1/11

M54/M74HC367/368

INPUT AND OUTPUT EQUIVALENT CIRCUIT

CHIP CARRIER

HC367 HC368

TRUTH TABLE

INPUTS OUTPUTS

G An Y n (367) Yn (368)

LLLH
LHHL

HXZZ

X = DON’T CARE Z =HIGH IMPEDANCE

PIN DESCRIPTION (HC367)

PIN No SYMBOL NAME AND FUNCTION

1, 15 G1, G2 Output Enable Inputs

2, 4, 6, 10,

12, 14

3, 5, 7, 9,

11, 13

8 GND Ground (0V)

16 V

1A to 6A Data Inputs

1Y to 6Y Data Outputs

CC

Positive Supply Voltage

NC = No Internal Connection

PIN DESCRIPTION (H C 3 68 )

PIN No SYMBOL NAME AND FUNCTION

1, 15 G1, G2 Output Enable Inputs

2, 4, 6, 10,

12, 14

3, 5, 7, 9,

11, 13

8 GND Ground (0V)

16 V

1A to 6A Data Inputs

1Y to 6Y Data Outputs

CC

Positive Supply Voltage

2/11

M54/M74HC367/368

IEC LOGIC SYMBOL

HC367 HC368

ABSOLU TE MAXI MUM RAT I NG S

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

or I

I

CC

P

D

T

stg

T

AbsoluteMaximumRatingsarethosevalues beyondwhichdamagetothedevice mayoccur.Functionaloperationunder theseconditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink CurrentPer OutputPin ± 35 mA
DC VCCor Ground Current ± 70 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

L

o

C

o

C

RECO MM ENDED OPERATIN G CONDITI O NS

Symbol Parameter Value Unit

V

T

t

V

V

r,tf

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

= 6 V 0 to 400

V

CC

V
V

o

C

o

C

3/11

M54/M74HC367/368

DC SPECIFICA TIONS

Symbol Parameter

V

V

V

V

I

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level

OH

Output Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
3 State Output

OZ

Off State Current
Quiescent Supply

CC

Current

Test Conditions Value

V

(V)

CC

=25oC

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85oC
74HC

-55 to 125oC
54HC

Unit

T

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

2.0

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

6.0

=

V

I

IO=-20 µA

V

IH

or

V

IL

=-6.0 mA 4.18 4.31 4.13 4.10

O

=-7.8 mA 5.68 5.8 5.63 5.60

O

=

V

I

IO=20µA

V

IH

or

V

IL

= 6.0 mA 0.17 0.26 0.33 0.40

O

= 7.8 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

VI=VIHor V

VO=VCCor GND

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

IL

±0.5 ±5 ±10 µA

6.0 VI=VCCor GND 4 40 80 µA

V

V

V

V

4/11

M54/M74HC367/368

AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)

Test Conditions Value

T

=25oC

Symbol Parameter

t
t

TLH
THL

Output Transition
Time

V

C

CC

(V)

L

(pF)

2.0
50

4.5 7121518

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

25 60 75 90

6.0 6101315

t

PLH

t

PHL

Propagation
Delay Time

2.0
50

4.5 10 17 21 26

30 85 105 130

6.0 9141822

2.0

150

4.5 14 21 26 32

42 105 130 160

6.0 12 18 22 27

t

t

PZH

PZL

Output Enable
Time

2.0
50 RL=1KΩ

4.5 11 18 23 27

36 90 115 135

6.0 9152023

2.0

150 R

4.5 15 22 28 33

=1KΩ

L

49 110 140 165

6.0 13 19 24 28

t

t

PHZ

PLZ

Output Disable
Time

2.0
50 RL=1KΩ

4.5 14 19 24 29

32 95 120 145

6.0 12 16 20 25

C

C

PD

Input Capacitance 5 10 10 10 pF

IN

(*) Power Dissipation

33

Capacitance

(*) CPDisdefined as the value ofthe IC’sinternal equivalent capacitance which is calculated fromthe operatingcurrent consumption without load.
(Referto Test Circuit).Average operting current canbe obtained bythe followingequation. ICC(opr) = CPD•VCC•fIN+ICC/6(per Channel)

-40 to 85oC
74HC

-55 to 125oC
54HC

Unit

ns

ns

ns

ns

ns

ns

pF

TEST CIRCUIT ICC(Opr.)

INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF
SWITCHINGCHARACTERISTICSTEST.

CPDCALCULATION

CPDis to be calculated with the following
formula by using the measured value of
ICC(opr.) in the testcircuit opposite.

I

(

opr

CPD=

f

CC
IN

)

×

V

CC

In determining the typicalvalue of CPD,a
relatively highfrequency of 1MHzwasap­pliedto fIN, in order to eliminate any error
causedby the quiescent supplycurrent.

5/11

M54/M74HC367/368

SWITCHING CHARACTERISTICS TEST WAVEFORM

GND

V

CC

Note:Such a logic levelshall be appliedto eachinput that the output voltage stays in theapposite side to the switchconnection level,when
the outputis enable.

6/11

Plastic DIP16 (0.25) MECHANICAL DATA

M54/M74HC367/368

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.77 1.65 0.030 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335

e 2.54 0.100

e3 17.78 0.700

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 0.050

mm inch

P001C

7/11

M54/M74HC367/368

Ceramic DIP16/1 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 20 0.787
B 7 0.276
D 3.3 0.130
E 0.38 0.015

e3 17.78 0.700

F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060

L 0.22 0.31 0.009 0.012
M 0.51 1.27 0.020 0.050
N 10.3 0.406

P 7.8 8.05 0.307 0.317

Q 5.08 0.200

mm inch

8/11

P053D

SO16 (Narrow)MECHANICAL DATA

M54/M74HC367/368

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.004 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 9.8 10 0.385 0.393

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 8.89 0.350

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.62 0.024

S8°(max.)

mm inch

P013H

9/11

M54/M74HC367/368

PLCC20 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 9.78 10.03 0.385 0.395

B 8.89 9.04 0.350 0.356

D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022

E 7.37 8.38 0.290 0.330

e 1.27 0.050

e3 5.08 0.200

F 0.38 0.015
G 0.101 0.004
M 1.27 0.050

M1 1.14 0.045

mm inch

10/11

P027A

M54/M74HC367/368

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consequences of useof such information norfor any infringementof patents or other rights of third parties which may results from its use. No
license is granted byimplication or otherwiseunder any patentor patent rightsof SGS-THOMSON Microelectronics.Specificationsmentioned
in thispublication are subjectto change without notice.This publication supersedes and replaces all information previouslysupplied.
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written approval ofSGS-THOMSON Microelectonics.

 1994SGS-THOMSON Microelectronics- All Rights Reserved

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