SGS Thomson Microelectronics M74HC366, M74HC365 Datasheet
HC365 NON INVERTING - HC366 INVERTING
.HIGH SPEED
tPD= 9 ns (TYP) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=4µA(MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
.SYMMETRICAL OUTPUT IMPEDANCE
|IOH|=IOL=6 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATING VOLTAGE RANGE
VCC(OPR)= 2 V TO 6 V
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS365/366
M54/M74HC365
M54/M74HC366
HEX BUS BUFFER (3-STATE)
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC X XXF1R M74H CXXXM1R
M74HC X XXB1R M 74H CXXXC1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC365 andtheM54/74HC366arehigh
speedCMOS HEX BUSBUFFER fabricated in silicon gate C2MOS technology. Theyhave the same
high speed performance of LSTTL combined with
true CMOS low power consumption.
All six buffers are controlled by the combination of
two enable inputs(G1 and G2); alloutputs of these
buffers areenabled only when both G1 and G2 inputs are held low, under all other conditions these
outputare disabled to be high-impedance.
Theseoutputsarecapableofdriving upto15LSTTL
loads. The designer has a choice of non-inverting
outputs(HC365)and inverting outputs (HC366).All
inputs areequipped with protection circuits against
staticdischarge andtransient excess voltage.
PIN CONNECTIONS(top view)
HC365
HC366
October 1992
1/11
M54/M74HC365/366
INPUT AND OUTPUT EQUIVALENT CIRCUIT
CHIP CARRIER
HC365 HC366
TRUTH TABLE
INPUTS OUTPUTS
G1 G2 An Y (365) Y (366)
LLLLH
LLHHL
HXXZZ
XHXZZ
X = DON’TCARE Z= HIGHIMPEDANCE
PIN DESCRIPTION (HC365)
PIN No SYMBOL NAME AND FUNCTION
1, 15 G1, G2 Output Enable Inputs
2, 4, 6, 10,
12, 14
3, 5, 7, 9,
11, 13
8 GND Ground (0V)
16 V
1A to 6A Data Inputs
1Y to 6Y Data Outputs
CC
Positive Supply Voltage
NC = No Internal Connection
PIN DESCRIPTION (HC366)
PIN No SYMBOL NAME AND FUNCTION
1, 15 G1, G2 Output Enable Inputs
2, 4, 6, 10,
12, 14
3, 5, 7, 9,
11, 13
8 GND Ground (0V)
16 V
1A to 6A Data Inputs
1Y to 6Y Data Outputs
CC
Positive Supply Voltage
2/11
M54/M74HC365/366
IEC LOGIC SYMBOL
HC365 HC366
ABSOLU TE MAXI MU M RAT I NG S
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethosevalues beyond whichdamage tothedevicemayoccur.Functional operationunder theseconditionisnotimplied.
(*)500 mW: ≅ 65oC derate to300mW by 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 35 mA
DC VCCor Ground Current ± 70 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
L
o
C
o
C
RECO MM ENDED OPERATIN G CO NDI TIONS
Symbol Parameter Value Unit
V
T
t
V
V
r,tf
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
V
V
o
C
o
C
3/11
M54/M74HC365/366
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level
OH
Output Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
3 State Output
OZ
Off State Current
Quiescent Supply
CC
Current
Test Conditions Value
V
(V)
CC
=25oC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85oC
74HC
-55 to 125oC
54HC
Unit
T
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
2.0
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
6.0
=
V
I
IO=-20 µA
V
IH
or
V
IL
=-6.0 mA 4.18 4.31 4.13 4.10
O
=-7.8 mA 5.68 5.8 5.63 5.60
O
=
V
I
IO=20µA
V
IH
or
V
IL
= 6.0 mA 0.17 0.26 0.33 0.40
O
= 7.8 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
VI=VIHor V
VO=VCCor GND
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
IL
±0.5 ±5 ±10 µA
6.0 VI=VCCor GND 4 40 80 µA
V
V
V
V
4/11
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