Datasheet M74HC352, M74HC353 Datasheet (SGS Thomson Microelectronics)

M54/74HC352
M54/74HC353

HC35 2: DUAL 4 CHA NNEL MUL TIPLEXE R(INV .)

HC353:DU AL 4 CH ANN EL MULTIPL EXE R 3 STATEOUTPUT(INV. )

.HIGH SPEED

tPD= 12 ns(TYP.) AT VCC=5V

.LOWPOWER DISSIPATION

ICC=4µA(MAX.) AT TA=25°C

.OUTPUTDRIVE CAPABILITY

10 LSTTL LOADS

.BALANCEDPROPAGATIONDELAYS

t

PLH=tPHL

B1R

(PlasticPackage)

F1R

(CeramicPackage)

.SYMMETRICALOUTPUT IMPEDANCE

IOL=IOH = 4 mA (MIN.)

.HIGH NOISE IMMUNITY

V

NIH=VNIL

.WIDE OPERATINGVOLTAGERANGE

VCC(OPR)= 2 V TO6 V

.PIN AND FUNCTION COMPATIBLE

WITH 54/74LS352/353

=28%VCC(MIN.)

M1R

(MicroPackage)

ORDER CODES :

M54HC X XXF1R M74H CXXXM1R
M74HC X XXB1R M 74HCXX XC1R

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HC352 and M54/74HC353 are high
speedCMOSDUAL 4CHANNELMULTIPLEXERS
INVERTING fabricated with silicon gate C2MOS
technology.
Bothachieve high speed operation, similar to equi­valent LSTTL while maintaining the CMOS low
power dissipation. The designer has a choice of
complementary output (HC352) and 3 stateoutput
(HC353). Each of these data (1C0-1C3, 2C0-2C3)
is selected by the two addressinputs A and B.
Separate strobe inputs (1G, 2G) are provided for
eachof the twofour line sections. Taking the strobe
input(1G, 2G) high inhibitsthe outputs. The output
of HC352is fixedatlogic lowleveland theoutput of
HC353has a highimpedance, unconditionally.
All inputs are equipped with protection circuits
against static discharge and transient excess volt­age.

PIN CONNECTIONS(top view)

NC =
No Internal
Connection

October 1993

1/11

M54/M74HC352/353

TRUTH TABLE

SELECT INPUTS DATA INPUTS STROBE OUTPUT Y

BAC

0

XXXXXXHHZ

LLLXXXLHH
LLHXXXLLL
LHXLXXLHH

LHXHXXLL L
HLXXLXLHH
HLXXHXLLL
HHXXXLLHH
HHXXXHLLL

X:Don’t Care
Z: HighImpedance

LOGI C DIAG RAM

HC352 HC353

C

1

C

2

C

3

G HC352 HC353

2/11

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 15 1G, 2G Output Enable Inputs

6, 5, 4, 3 1C

to 1C3Data Input from Source 1

0

7 1Y DataOutputs fromSource1
9 2Y DataOutputs fromSource2

10, 11, 12,132C

to 2C3Data Input from Source 2

0

14, 2 A, B Common Data Select

8 GND Ground (0V)

16 V

CC

IEC LOGIC SYMBOL

HC352 HC353

M54/M74HC352/353

Inputs

Positive Supply Voltage

ABSOLU TE M AXI MU M R AT INGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

or I

I

CC

P

D

T

stg

T

AbsoluteMaximumRatingsarethosevalues beyondwhichdamage tothedevicemayoccur.Functional operationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derateto 300 mW by 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

L

o

C

o

C

3/11

M54/M74HC352/353

RECO MM ENDED O PERAT IN G CONDI TIONS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICATIO NS

Symbol Parameter

V

IH

V

V

OH

V

OL

I

I

OZ

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

Low Level Input

IL

Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
3 State Output

Off State Current

2.0
V

=

I

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

VI=VIHor V

6.0

VO=VCCor GND

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

IL

±0.5 ±5 ±10 µA

(for HC353)
Quiescent Supply

6.0 VI=VCCor GND 4 40 80 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

V

4/11

AC ELECTRICAL CHARACTERISTI CS (CL=50pF,Inputtr=tf=6ns)

Test Conditions Value

T

Symbol Parameter

t

TLH

t

THL

t

PLH

t

PHL

Output Transition
Time

Propagation
Delay Time
(Cn - Y)
for HC352

=25oC

V

(V)

CC

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

2.0 30 75 95 110

4.5 8151922

6.0 7131619

2.0 56 115 145 175

4.5 14 23 29 35

6.0 12 20 25 30

-40 to 85oC
74HC

M54/M74HC352/353

-55 to 125oC
54HC

Unit

ns

ns

t
t

PLH
PHL

Propagation
Delay Time
(A, B - Y)
for HC352

t
t

PLH
PHL

Propagation
Delay Time
(G - Y)
for HC352

t

PLH

t

PHL

Propagation
Delay Time
(Cn - Y)
for HC353

t
t

PLH
PHL

Propagation
Delay Time
(A, B - Y)
for HC353

t

t

PZL
PZH

Output Enable
Time (G - Y)
for HC353

t

t

PLZ
PHZ

Output Disable
Time (G - Y)
for HC353

C

C

PD

Input Capacitance 5 10 10 10 pF

IN

(*) Power Dissipation

Capacitance

(*) CPDisdefined as the value of the IC’s internal equivalent capacitance whichis calculated from the operatingcurrentconsumption without load.
(Referto TestCircuit). Average opertingcurrentcan be obtainedbythe followingequation. ICC(opr) = CPD•VCC•fIN+I

2.0 80 150 190 225

4.5 20 30 38 45

ns

6.0 17 26 33 38

2.0 40 85 105 130

4.5 10 17 21 26

ns

6.0 9141822

2.0 64 125 155 95

4.5 16 25 31 38

ns

6.0 14 21 26 32

2.0 84 150 190 225

4.5 21 30 38 45

ns

6.0 18 26 33 38

2.0
R

=1KΩ

4.5 16 23 29 35

L

64 115 145 175

ns

6.0 14 20 25 30

2.0

4.5 11 20 25 30

RL=1KΩ

44 100 125 150

ns

6.0 9172126

for HC352
for HC353

63
61

pF

CC

5/11

M54/M74HC352/353

SWITCHING CHARACTERISTICS TEST WAVEFORMS

TEST CIRCUIT ICC(Opr.)

V

OL

V

OH

6/11

Plastic DIP16 (0.25) MECHANICAL DATA

M54/M74HC352/353

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.77 1.65 0.030 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335

e 2.54 0.100

e3 17.78 0.700

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 0.050

mm inch

P001C

7/11

M54/M74HC352/353

Ceramic DIP16/1 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 20 0.787
B 7 0.276
D 3.3 0.130
E 0.38 0.015

e3 17.78 0.700

F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060

L 0.22 0.31 0.009 0.012
M 0.51 1.27 0.020 0.050
N 10.3 0.406

P 7.8 8.05 0.307 0.317

Q 5.08 0.200

mm inch

8/11

P053D

SO16 (Narrow) MECHANICAL DATA

M54/M74HC352/353

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.004 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 9.8 10 0.385 0.393

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 8.89 0.350

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.62 0.024

S8°(max.)

mm inch

P013H

9/11

M54/M74HC352/353

PLCC20 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 9.78 10.03 0.385 0.395

B 8.89 9.04 0.350 0.356

D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022

E 7.37 8.38 0.290 0.330

e 1.27 0.050

e3 5.08 0.200

F 0.38 0.015
G 0.101 0.004
M 1.27 0.050

M1 1.14 0.045

mm inch

10/11

P027A

M54/M74HC352/353

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consequences of useof such information norfor any infringementof patents or other rights of third parties which may results from its use. No
license is granted by implication orotherwise under any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces allinformation previously supplied.
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written approval of SGS-THOMSON Microelectonics.

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11/11