.HIGH SPEED
tPD= 12 ns(TYP.) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.HIGH NOISE IMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTLLOADS
.SYMMETRICALOUTPUT IMPEDANCE
IOH =IOL= 4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGE RANGE
VCC(OPR)= 2 V TO6 V
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS30
M54HC30
M74HC30
8 INPUT NANDGATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 30F1R M74H C30M1R
M74HC 30B1R M74HC3 0C1R
(CeramicPackage)
(Chip Carrier)
F1R
C1R
DESCRIPTION
The M54/74HC30 is a high speed CMOS 8-INPUT
NAND GATE fabricated with silicon gate C2MOS
technology.
It has the same high speedperformance of LSTTL
combined with trueCMOS lowpower consumption.
The internal circuitis composedof 5stages including buffer output, which gives high noiseimmunity
and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN CONNECTIONS (top view)
NC =
No Internal
Connection
February 1993
1/9
M54/M74HC30
TRUTH TABLE
ABCDEFGHY
LXXXXXXXH
XLXXXXXXH
XXLXXXXXH
XXXLXXXXH
XXXXLXXXH
XXXXXLXXH
XXXXXXLXH
XXXXXXXLH
HHHHHHHHL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 2, 3, 4,
5, 6, 11, 12
A, B, C, D,
E, F, G, H
Data Inputs
9, 10, 13 NC Not connected
8 Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
SCHEM ATIC CIRCUIT (Per Gate)
IEC LOGIC SYMBOL
ABSOLU TE MAXIMUM R AT ING S
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethose values beyondwhichdamagetothedevice mayoccur. Functionaloperationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derateto 300 mWby 10mW/oC: 65oCto85oC
2/9
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C
M54/M74HC30
RECO MM ENDED OPERATI N G CO NDITI O NS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICATIO NS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
2.0
V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 1 10 20 µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
3/9
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