SGS Thomson Microelectronics M74HC298 Datasheet
QUAD 2 CHANNEL MULTIPLEXER/REGISTER
.HIGH SPEED
f
= 73 MHz(typ.) AT VCC=5V
MAX
.LOWPOWERDISSIPATION
ICC=4µA(MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICALOUTPUT IMPEDANCE
IOH =IOL= 4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGE RANGE
VCC(OPR)= 2V TO6 V
.PIN ANDFUNCTION COMPATIBLE
WITH 54/74LS298
DESCRIPTION
The M54/74HC298 isahighspeedCMOSQUAD2CHANNEL MULTIPLEXER/REGISTER fabricated
in silicongate C2MOStechnology.
It has the same high speed performance of LSTTL
combined withtrue CMOSlowpower consumption.
Thesecircuits are controlled by the signals WORD
SELECT and CLOCK. When the WORD SELECT
input is taken low Word 1 (A1, B1, C1 and D1) is
presented to the input of the flip-flops, and when
WORDSELECT ishighWord 2(A2,B2,C2 and D2)
is presented to theinputs of theflip-flops. Theselect
wordis clockedtothe outputterminals onthe negative edge oftheclockpulse. Allinputsare equipped
with protection circuitsagainst static discharge and
transient excess voltage.
M54HC298
M74HC298
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 298F1R M74H C298M1R
M74HC 298B1R M74HC2 98C1R
PIN CONNECTIONS(top view)
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
October 1992
NC =
No Internal
Connection
1/11
M54/M74HC298
TRUTH TABLE
INPUTS OUTPUTS
WORD SELECT CLOCK QA QB QC QD
La1b1c1d1
Ha2b2c2d2
X : DON’T CARE(INCLUDINGTRANSITION)
a1, a2, ETC : THE LEVELOF STEAY STATEINPUT ATa1, a2,etc.
QA0, QB0,ETC: THE LEVEL OF QA, QB,ETC ENTEREDON THE MOSTRECENT NEGATIVETRANSITION OF THECLOCK INPUT.
LOGI C DI AGRAM
X QA0 QB0 QC0 QD0
2/11
M54/M74HC298
PIN DESC RIPTION
IEC LOGIC SYMBOL
PIN No SYMBOL NAME AND FUNCTION
1, 2, 5, 6 A2, B2,
Word 2 Data Inputs
C2, D2
3, 4, 7, 9 A1, B1,
Word 1 Data Inputs
C1, D1
12 to 15 QA to QD Outputs
10 WORD
Word Select Input
SELECT
11 CLOCK Clock Input (HIGH to
LOW, Edge-triggered)
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
ABSOLU TE M AXIMU M R AT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethose valuesbeyond whichdamage to thedevice mayoccur.Functional operation under these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10sec) 300
L
o
C
o
C
RECO MM ENDED OPERATI N G CO NDI TIONS
Symbol Parameter Value Unit
V
V
T
t
V
r,tf
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
= 6 V 0 to 400
V
CC
V
V
o
C
o
C
3/11
M54/M74HC298
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level
OH
Output Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
Test Conditions Value
V
(V)
CC
=25oC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85oC
74HC
-55 to 125oC
54HC
Unit
T
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
2.0
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
=
V
I
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 4 40 80 µA
V
V
V
V
4/11
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