SGS Thomson Microelectronics M74HC7266, M74HC266 Datasheet

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

HC7266 QUAD EXCLUSIVE NOR GATE

.HIGH SPEED

tPD= 10 ns(TYP.) AT VCC=5V

.LOWPOWER DISSIPATION

ICC=1µA(MAX.) AT TA=25°C

.HIGH NOISE IMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

.SYMMETRICAL OUTPUT IMPEDANCE (7266)

|IOH|=IOL=4 mA (MIN.)

.BALANCEDPROPAGATIONDELAYS (7266)

t

PLH=tPHL

.WIDE OPERATING VOLTAGE RANGE

VCC(OPR)= 2 V TO6 V

.PIN ANDFUNCTION COMPATIBLE

WITH 54/74LS7266

M54/74HC266

M54/74HC7266

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC X XXF1R M74H CXXX1R
M74HC X XXB1R M74HCX X XC1R

F1R

(CeramicPackage)

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HC266/7266 are high speed CMOS
QUADEXCLUSIVE NORGATES, fabricatedin sili­con gate C2MOS technology. They have the same
high speed performance of LSTTL combined with
true CMOS low power consumption.

The HC266 has a high performance N-channel
MOS transistor (OPENDRAIN output).

The HC7266 has an output buffer which is CMOS
structure.

Inputand outputbuffersensure highnoiseimmunity
and stableoutputs.

All inputs are equipped with protection circuits
against static discharge and transient excess volt­age.

PIN CONNECTIONS(top view)

NC =
No Internal
Connection

March1993

1/11

M54/M74HC266/7266

INPUT AND OUTPUT EQUIVALENT CIRCUIT

(HC266)

PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 5, 8, 12 1A to 4A Data Inputs
2, 6, 9, 13 1B to 4B Data Inputs

3, 4, 10, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

INPUT AND OUTPUT EQUIVALENT CIRCUIT

(HC7266)

TRUTH TABLE

AB

LLHZ

LHLL
HLLL
HHHZ

Z: High Impedance

7266 266

Y

IEC LOGIC SYMBOLS

HC7266HC266

2/11

M54/M74HC266/7266

LOGI C DI AG RAM

ABSOLU TE M AXIMU M R AT INGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

or I

I

CC

P

D

T

stg

AbsoluteMaximumRatingsarethose values beyond whichdamage tothedevicemayoccur. Functionaloperationunder these conditionisnotimplied.
(*)500 mW:≅ 65oC derate to 300mW by 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VDD+ 0.5 V

I

DC Output Voltage -0.5 to VDD+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150

o

C

RECO MM ENDED OPERAT I N G CO NDI TIONS

Symbol Parameter Value Unit

V

T

t

V

V

r,tf

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

= 6 V 0 to 400

V

CC

V
V

o

C

o

C

3/11

M54/M74HC266/7266

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level

OH

Output Voltage
(HC7266)

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Output Leakage

OZ

Current (HC266)
Quiescent Supply

CC

Current

Test Conditions Value

V

(V)

CC

=25oC

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85oC
74HC

-55 to 125oC
54HC

Unit

T

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

2.0

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

6.0

=

V

I

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

V

I=VIH

or V

VO=VCCor GND

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

IL

±0.5 ±5 ±10 µA

6.0 VI=VCCor GND 1 10 20 µA

V

V

V

V

4/11