SGS Thomson Microelectronics M74HC251 Datasheet

.HIGH SPEED

tPD= 14 ns(TYP.) AT VCC=5V

.LOWPOWER DISSIPATION

ICC=4µA(MAX.) AT TA=25°C6V

.HIGH NOISE IMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

10 LSTTLLOADS

.SYMMETRICALOUTPUT IMPEDANCE

IOH =IOL= 4 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATINGVOLTAGE RANGE

VCC(OPR)= 2 V TO6 V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS251

DESCRIPTION

TheM54/74HC251is ahighspeedCMOS8-CHAN­NELMULTIPLEXER(3-STATE)fabricatedinsilicon
gate C2MOS technology. It has the same high
speed performance of LSTTL combined with true
CMOS low power consumption. This multiplexer
featuresboth true (Y) and complement (W)outputs
as well as STROBE input.The STROBEmust be a
low logic level to enable this device. When the
STROBEinput is high, both outputs are in the high
impedance state. When enabled, address informa­tionon the dataselectinputs determineswhichdata
input is routed to Y and W. All inputs areequipped
with protection circuits against staticdischarge and
transient excess voltage.

M54HC251
M74HC251

8 BITSIPO SHIFT REGISTER

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 251F1R M74H C251M1R
M74HC 251B1R M74HC2 51C1R

PIN CONNECTIONS (top view)

F1R

(CeramicPackage)

C1R

(Chip Carrier)

INPUT AND OUTPUT EQUIVALENT CIRCUIT

February 1993

NC =
No Internal
Connection

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M54/M74HC251

TRUTH TABLE

CBAS

XXXHZZ

LLLLD0D0
L L H L D1 D1
LHLLD2D2

LHHLD3D3
H L L L D4 D4
H L H L D5 D5
H H L L D6 D6
H H H L D7 D7

X:Don’t Care Z: HIGH Impedance

LOGI C DIAG RAM

INPUTS OUTPUS

STROBE

YW

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M54/M74HC251

PIN DESCRIPTION

IEC LOGIC SYMBOL

PIN No SYMBOL NAME AND FUNCTION

4, 3, 2, 1,

D0 to D7 Multiplexer Inputs

15, 14, 13,

12

5 Y Multiplexer Output
6 W Complementary

Multiplexer Output

7 STROBE 3 State Output Enable

Input

11, 10, 9 A, B, C Select Inputs

8 GND Ground (0V)

16 V

CC

Positive Supply Voltage

ABSOLU TE MAXIMU M RATINGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

or I

I

CC

P

D

T

stg

T

AbsoluteMaximumRatingsarethose values beyondwhichdamagetothedevice mayoccur. Functionaloperationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derateto 300 mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

L

o

C

o

C

RECO MM ENDED O PERAT IN G C O NDITI O NS

Symbol Parameter Value Unit

V

V

T

t

V

r,tf

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

= 6 V 0 to 400

V

CC

V
V

o

C

o

C

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M54/M74HC251

DC SPECIFICATIO NS

Symbol Parameter

V

V

V

V

I

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level

OH

Output Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
3 State Output

OZ

Off State Current
Quiescent Supply

CC

Current

Test Conditions Value

V

(V)

CC

=25oC

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85oC
74HC

-55 to 125oC
54HC

Unit

T

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

2.0

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

=

V

I

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

6.0 VI=VIHor V

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

IL

±0.5 ±5.0 ±10 µA

VO=VCCor GND

6.0 VI=VCCor GND 4 40 80 µA

V

V

V

V

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