SGS Thomson Microelectronics M74HC243, M74HC242 Datasheet
QUAD BUS TRANSCEIVER (3-STATE)
.HIGH SPEED
tPD= 9 ns (TYP.)AT VCC=5V
.LOWPOWERDISSIPATION
ICC=4µA(MAX.) AT 25 °C
.OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.SYMMETRICALOUTPUT IMPEDANCE
IOL=IOH = 6 mA (MIN.)
.HIGH NOISE IMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.WIDE OPERATINGVOLTAGE RANGE
VCC(OPR)= 2V TO6 V
.PIN ANDFUNCTION COMPATIBLE
WITH 54/74LS242/243
DESCRIPTION
The M54/74HC242/243 are high speed CMOS
QUAD BUS TRANSCEIVER (3-STATE)
FABRICATED IN SILICON GATE C2MOS
technology. They have the same high speed
performance of LSTTL combined with true CMOS
low power consumption. The HC242/243 are 3
STATE bi-directional inverting and non-inverting
buffersand are intendedfor two-wayasynchronous
communication betweendata buses. They arehigh
drive current outputs which enable high speed
operation when driving large bus capacitances.
Eachdevice hasone activehighenable (GBA),and
one active low enable (GAB). GBA enables the A
outputs and GAB enables the B outputs. All inputs
are equipped with protection circuits against static
discharge and transient excess voltage.
M54/74HC242
M54/74HC243
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC X XXF1R M74H CXXXM1R
M74HC X XXB1R M74HCX X XC1R
PIN CONNECTIONS(top view)
HC242
(CeramicPackage)
F1R
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
October 1993
HC243
NC =
No Internal
Connection
1/11
M54/M74HC242/243
CHIP CARRIER
TRUTH TABLE
INPUTS FUNCTION OUTPUTS
GAB GBA A BUS B BUS HC242 HC243
H H OUTPUT INPUT A = B A = B
L L INPUT OUTPUT B = A B = A
H L HIGH IMPEDANCE Z Z
L H HIGH IMPEDANCE Z Z
IEC LOGIC SYMBOLS
HC242 HC243
PIN DESCRIPTI ON
PIN No SYMBOL NAME AND FUNCTION
1 GAB Output Enable Input
(active LOW)
2, 12 NC Not connected
3, 4, 5, 6 1A to 4A Data Inputs/Outputs
11, 10, 9, 8 1B to 4B Data Inputs/Outputs
13 GBA Output Enable Input
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
2/11
CIR CUI T D IA GR AM
M54/M74HC242/243
ABSOLU TE M AXIMU M R AT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevicemayoccur. Functionaloperationunder these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 35 mA
DC VCCor Ground Current ± 70 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10sec) 300
L
o
C
o
C
3/11
M54/M74HC242/243
RECO MM ENDED OPERAT IN G CO NDITI ONS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICATIONS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
OZ
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
3 State Output
Off-state Current
Quiescent Supply
2.0
V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
6.0
IO=-20 µA
V
IH
or
V
IL
=-6.0 mA 4.18 4.31 4.13 4.10
O
=-7.8 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 6.0 mA 0.17 0.26 0.33 0.40
O
= 7.8 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
VI=VIHor V
VO=VCCor GND
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
IL
±0.5 ±5 ±10 µA
6.0 VI=VCCor GND 4 40 80 µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
4/11
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