.HIGH SPEED
tPD= 10 ns (TYP.) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
= 28% VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICAL OUTPUT IMPEDANCE
IOH =IOL= 4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGERANGE
VCC(OPR)= 2 V TO 6 V
.PIN AND FUNCTION COMPATIBLE
WITH 54/74LS21
M54HC21
M74HC21
DUAL 4-INPUT AND GATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 21F1R M74H C21M1R
M74HC 21B1R M 74HC21C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC21 is a high speed CMOS DUAL 4INPUTANDGATEfabricated insilicongateC2MOS
technology. It has the same high speed performanceofLSTTLcombinedwithtrueCMOSlowpower
consumption.
The internal circuits is composed of3stagesincludingbufferedoutput,whichgiveshighnoiseimmunity
and a stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
December1992
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M54/M74HC21
TRUTH TABLE
ABCDY
LXXXL
XLXXL
XXLXL
XXXLL
HHHHH
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 9 1A to 2A Data Inputs
2, 10 1B to 2B Data Inputs
3, 11 N C Not Connected
4, 12 1C to 2C Data Inputs
5, 13 1D to 2D Data Inputs
6, 8 1Y to 2Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
SCHEM ATIC C I R CUI T (Per Gate)
IEC LOGIC SYMBOL
ABSOLU TE MAXIMU M RAT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevicemayoccur. Functional operationunder theseconditionisnotimplied.
(*)500 mW: ≅ 65oC derate to300 mW by 10mW/oC: 65oCto85oC
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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C
M54/M74HC21
RECO MM ENDED OPERATIN G C O NDITI ONS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICA TIONS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
2.0
V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 1 10 20 µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
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