SGS Thomson Microelectronics M74HC21 Datasheet

.HIGH SPEED
tPD= 10 ns (TYP.) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
= 28% VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICAL OUTPUT IMPEDANCE
IOH =IOL= 4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGERANGE
VCC(OPR)= 2 V TO 6 V
.PIN AND FUNCTION COMPATIBLE
WITH 54/74LS21
M54HC21 M74HC21
DUAL 4-INPUT AND GATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 21F1R M74H C21M1R M74HC 21B1R M 74HC21C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC21 is a high speed CMOS DUAL 4­INPUTANDGATEfabricated insilicongateC2MOS technology. It has the same high speed perform­anceofLSTTLcombinedwithtrueCMOSlowpower consumption.
The internal circuits is composed of3stagesinclud­ingbufferedoutput,whichgiveshighnoiseimmunity and a stable output.
All inputs are equipped with protection circuits against static discharge and transient excess volt­age.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN CONNECTIONS(top view)
NC = No Internal Connection
December1992
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M54/M74HC21
TRUTH TABLE
ABCDY
LXXXL XLXXL XXLXL XXXLL HHHHH
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 9 1A to 2A Data Inputs 2, 10 1B to 2B Data Inputs 3, 11 N C Not Connected 4, 12 1C to 2C Data Inputs 5, 13 1D to 2D Data Inputs
6, 8 1Y to 2Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
SCHEM ATIC C I R CUI T (Per Gate)
IEC LOGIC SYMBOL
ABSOLU TE MAXIMU M RAT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevicemayoccur. Functional operationunder theseconditionisnotimplied. (*)500 mW: 65oC derate to300 mW by 10mW/oC: 65oCto85oC
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Supply Voltage -0.5 to +7 V DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V DC Input Diode Current ± 20 mA DC Output Diode Current ± 20 mA DC Output Source Sink Current Per Output Pin ± 25 mA DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW Storage Temperature -65 to +150 Lead Temperature (10 sec) 300
o
C
o
C
M54/M74HC21
RECO MM ENDED OPERATIN G C O NDITI ONS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICA TIONS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC 74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level Output Voltage
Low Level Output Voltage
Input Leakage
I
Current Quiescent Supply
2.0 V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 1 10 20 µA
Current
54HC
V V
o
C
o
C
Unit
V
V
V
V
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