SGS Thomson Microelectronics M74HC20 Datasheet

.HIGH SPEED

tPD= 8 ns (TYP.) AT VCC=5V

.LOWPOWER DISSIPATION

ICC=1µA(MAX.)AT TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

.SYMMETRICAL OUTPUT IMPEDANCE

IOH =IOL= 4 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATINGVOLTAGERANGE

VCC(OPR)= 2 V TO 6 V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS20

M54HC20
M74HC20

DUAL 4-INPUT NANDGATE

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 20F1R M74H C20M1R
M74HC 20B1R M 74HC20C1R

F1R

(CeramicPackage)

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HC20 is a highspeed CMOS DUAL 4­INPUT NAND GATE fabricated in silicon gate
C2MOStechnology.Ithasthesame highspeedper­formance of LSTTL combined with true CMOS low
powerconsumption.

The internal circuit is composedof 3 stages includ­ingbufferedoutput,whichgiveshighnoiseimmunity
andastableoutput.Allinputsareequippedwithpro­tectioncircuitsagainst staticdischargeandtransient
excess voltage.

INPUT AND OUTPUT EQUIVALENT CIRCUIT

PIN CONNECTIONS(top view)

NC =
No Internal
Connection

December1992

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M54/M74HC20

TRUTH TABLE

ABCDY

LXXXH
XLXXH
XXLXH
XXXLH
HHHHL

PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 9 1A to 2A Data Inputs
2, 10 1B to 2B Data Inputs
3, 11 N. C. Not Connected
4, 12 1C, 2C Data Inputs
5, 13 1D, 2D Data Inputs

6, 8 1Y to 2Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

SCHEM ATIC CIR CUIT (Per Gate)

IEC LOGIC SYMBOL

ABSOLU TE MAXIMUM RATING S

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

or I

I

CC

P

D

T

stg

T

L

AbsoluteMaximum Ratings arethose valuesbeyondwhichdamage tothedevicemayoccur. Functionaloperation under theseconditionisnotimplied.
(*)500 mW: ≅ 65oC derate to300mW by 10mW/oC: 65oCto85oC

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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

o

C

o

C

M54/M74HC20

RECO MM ENDED OPERAT IN G C ONDI TIONS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICA TIONS

Symbol Parameter

V

IH

V

V

OH

V

OL

I

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

Low Level Input

IL

Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
Quiescent Supply

2.0
V

=

I

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

6.0 VI=VCCor GND 1 10 20 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

V

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