SGS Thomson Microelectronics M74HC173 Datasheet

QUAD D-TYPEREGISTER (3-STATE)

.HIGH SPEED

f

= 73 MHz(TYP.) at VCC=5V

MAX

.LOWPOWERDISSIPATION

ICC=4µA(MAX.) at TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

15 LSTTL LOADS

.SYMMETRICALOUTPUT IMPEDANCE

|IOH|=IOL=6 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATINGVOLTAGE RANGE

VCC(OPR)= 2V to 6V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS 173

M54HC173
M74HC173

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 173F1R M74H C173M1R
M74HC 173B1R M74HC1 73C1R

F1R

(CeramicPackage)

C1R

(Chip Carrier)

DESCRIPTION

TheM54/74HC173is ahighspeedCMOSQUADD­TYPE REGISTER (3-STATE) fabricated in silicon
gate C2MOStechnology.

It has the same high speed performance of LSTTL
combined withtrue CMOSlowpower consumption.
Thisdeviceiscomposedofa four-bit register includ­ingD-typeflip-flopsand3-state buffers. Thefourflip­flops are controlled by a common clock input
(CLOCK)and acommonresetinput (CLEAR). Sig­nals applied to the datainputs (D1-D4) arestored at
the respective flip-flops on the positive going transi­tion of theclock input, onlywhen both clock control
inputs (G1and G2) are held low.

The reset feature is asynchronous andactive high.
The stored data are provided on each outputonly
when bothoutput control inputs(M and N) are held
low,otherwise theoutputsgotothehigh-impedance
state.

All inputs are equipped with protection circuits
against static discharge and transient excess volt­age.

PIN CONNECTIONS(top view)

NC =
No Internal
Connection

October 1992

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M54/M74HC173

TRUTH TABLE

CLEAR CLOCK

XXXXXHXZ
XXXXXXHZ
HXXXXLLL
LXXXLLQ0
LHXXLLQ0
LXHXLLQ0
LLLHLLH
L LLLLLL

X:Don’tCare Z:HighImpedance

DATA ENABLE

G1 G2 M N

Dn

OUTPUT CONTROL

Qn

LOGI C DI AG RAM

2/12

INPUT AND OUTPUT EQUIVALENT CIRCUIT

M54/M74HC173

PIN DESC RIPTION

IEC LOGIC SYMBOL

PIN No SYMBOL NAME AND FUNCTION

1, 2 M, N Output Enable Input

(Active LOW)

3, 4, 5, 6 1Q to 4Q 3-State Flip-flop Outputs

7 CLOCK Clock Input (LOW to

HIGH, Edge-triggered)

9, 10 G1, G2 Data Enable Inputs

(Active LOW)

14, 13, 12,111D to 4D Data Inputs

15 CLEAR Asynchronous Master

Reset (Active HIGH)

8 GND Ground (0V)

16 V

CC

Positive Supply Voltage

ABSOLU TE M AXIMU M R AT ING

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

I

or I

CC

P

D

T

stg

T

AbsoluteMaximumRatingsarethose values beyond whichdamage tothedevicemayoccur. Functional operation under these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 35 mA
DC VCCor Ground Current ± 70 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10sec) 300

L

o

C

o

C

3/12

M54/M74HC173

RECO MM ENDED OPERATING CO NDI TIONS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICATIONS

Symbol Parameter

V

IH

V

V

OH

V

OL

I

I

OZ

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

Low Level Input

IL

Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
3 State Output

Off State Current
Quiescent Supply

2.0
V

=

I

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

IO=-20 µA

V

IH

or

V

IL

=-6.0 mA 4.18 4.31 4.13 4.10

O

=-7.8 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 6.0 mA 0.17 0.26 0.37 0.40

O

= 7.8 mA 0.18 0.26 0.37 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

6.0 VI=VIHor V

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

IL

æ0.5 ±5.0 ±10 µA

VO=VCCor GND

6.0 VI=VCCor GND 4 40 80 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

V

4/12